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  1. 2025

  2. GaAs Nanowire Growth by MBE with Catalyst Forming Eutectic Points with Both Elements

    Сибирёв, Н. В., Сошников, И. П., Илькив, И. В., Убыйвовк, Е. В., Цырлин, Г. Э. & Штром, И. В., 1 Nov 2025, In: Nanomaterials. 15, 21, 1664.

    Research output: Contribution to journal › Article › peer-review

  3. MBE growth and properties of branched AlGaAs nanowires on silicon

    Резник, Р. Р., Андреева, А. С., Котляр, К. П., Хребтов, А. И., Илькив, И. В., Гридчин, В. О., Сошников, И. П., Syuy, A. V., Кузнецов, А., Большаков, А. Д., Цырлин, Г. Э. & Дубровский, В. Г., 16 May 2025, In: Nanotechnology. 36, 23, 235601.

    Research output: Contribution to journal › Article › peer-review

  4. 2024

  5. Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy

    Штром, И. В., Сибирёв, Н. В., Сошников, И. П., Илькив, И. В., Убыйвовк, Е. В., Резник, Р. Р. & Цырлин, Г. Э., 21 Nov 2024, In: Nanomaterials. 14, 23, 1860.

    Research output: Contribution to journal › Article › peer-review

  6. 2022

  7. Hexagonal Ge on the side facets of GaAs and AlGaAs nanowires

    Ilkiv, I. V., Kotlyar, K. P., Kirilenko, D. A., Soshnikov, I. P., Mikushev, S. V., Dubrovskii, V. G. & Cirlin, G. E., Jul 2022, 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., p. 1-1

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  8. III-V hybrid nanostructures on silicon: molecular-beam epitaxy growth and physical properties

    Резник, Р. Р., Котляр, К. П., Гридчин, В. О., Цырлин, Г. Э., Хребтов, А. И., Сошников, И. П., Самсоненко, Ю. Б., Илькив, И. В., Крыжановская, Н., Драгунова, А., Leandro, L. & Akopian, N., May 2022.

    Research output: Contribution to conference › Paper › peer-review

  9. 2021

  10. Effect of wet KOH etching on structural properties of GaN nanowires grown on patterned SiOx/Si substrates

    Lendyashova, V. V., Kotlyar, K. P., Gridchin, V. O., Reznik, R. R., Lihachev, A. I., Soshnikov, I. P. & Cirlin, G. E., 14 Dec 2021, In: Journal of Physics: Conference Series. 2103, 1, 012098.

    Research output: Contribution to journal › Conference article › peer-review

  11. Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE

    Gridchin, V. O., Dragunova, A. S., Kotlyar, K. P., Reznik, R. R., Komarov, S. D., Kryzhanovskaya, N. V., Soshnikov, I. P., Samsonenko, Y. B. & Cirlin, G. E., 6 Dec 2021, In: Journal of Physics: Conference Series. 2086, 1, 012013.

    Research output: Contribution to journal › Conference article › peer-review

  12. Separation of III-N partially-coalesced nanowire arrays from Si substrate

    Lendyashova, V. V., Kotlyar, K. P., Gridchin, V. O., Reznik, R. R., Lihachev, A. I., Shubina, K. Y., Berezovskaya, T. N., Nikitina, E. V., Soshnikov, I. P. & Cirlin, G. E., 6 Dec 2021, In: Journal of Physics: Conference Series. 2086, 1, 012191.

    Research output: Contribution to journal › Conference article › peer-review

  13. III-V nanowires with quantum dots: MBE growth and properties

    Reznik, R. R., Kotlyar, K. P., Gridchin, V. O., Ilkiv, I. V., Khrebtov, A. I., Samsonenko, Y. B., Soshnikov, I. P., Kryzhanovskaya, N. V., Leandro, L., Akopian, N. & Cirlin, G. E., 17 Nov 2021, In: Journal of Physics: Conference Series. 2015, 1, 012124.

    Research output: Contribution to journal › Conference article › peer-review

  14. Specific Features of Structural Stresses in InGaN/GaN Nanowires

    Soshnikov, I. P., Kotlyar, K. P., Reznik, R. R., Gridchin, V. O., Lendyashova, V. V., Vershinin, A. V., Lysak, V. V., Kirilenko, D. A., Bert, N. A. & Cirlin, G. E., Oct 2021, In: Semiconductors. 55, 10, p. 795-798 4 p.

    Research output: Contribution to journal › Article › peer-review

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