DOI

Growth of hexagonal Ge stripes on the side facets of wurtzite AlGaAs and GaAs nanowires is considered. It is shown experimentally and explained within a model that Ge forms stripes on AlGaAs nanowires, while it covers conformally GaAs nanowires. The effect is explained by different surface and interface energies in the two material systems.

Original languageEnglish
Title of host publication2022 International Conference Laser Optics, ICLO 2022 - Proceedingss
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-1
ISBN (Electronic)9781665466646
ISBN (Print)9781665466646
DOIs
StatePublished - Jul 2022
Event2022 International Conference Laser Optics, ICLO 2022 - St. Petersburg, Russia, St. Petersburg, Russian Federation
Duration: 20 Jun 2022 → 24 Jun 2022
Conference number: 20

Conference

Conference2022 International Conference Laser Optics, ICLO 2022
Abbreviated titleICLO 2022
Country/TerritoryRussian Federation
CitySt. Petersburg
Period20/06/22 → 24/06/22

    Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

    Research areas

  • GaAs and AlGaAs nanowires, hexagonal Ge, molecular beam epitaxy, surface energetics

ID: 99999892