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  1. 2018

  2. MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer

    Reznik, R. R., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Lebedev, S. P., Lebedev, A. A., Kirilenko, D. A., Alexeev, P. A. & Cirlin, G. E., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1428-1431 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon

    Cirlin, G. E., Reznik, R. R., Samsonenko, Y. B., Khrebtov, A. I., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Kirilenko, D. A. & Kryzhanovskaya, N. V., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1416-1419 4 p.

    Research output: Contribution to journal › Article › peer-review

  4. MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate

    Reznik, R. R., Kotlyar, K. P., Kukushkin, S. A., Osipov, A. V., Soshnikov, I. P., Nikitina, E. V. & Cirlin, G. E., 13 Aug 2018, Proceedings - International Conference Laser Optics 2018, ICLO 2018. Institute of Electrical and Electronics Engineers Inc., p. 382 1 p. 8435191. (Proceedings - International Conference Laser Optics 2018, ICLO 2018).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  5. Фоточувствительное устройство и способ его изготовления.

    Котляр, К. П., Кукушкин, С. А., Осипов, А. В., Резник, Р. Р., Сошников, И. П. & Цырлин, Г. Э., 26 Jul 2018, Patent No. RU 2685032

    Research output: Patenting and IP registration › Patent

  6. MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate

    Reznik, R. R., Shtrom, I. V., Soshnikov, I. P., Kukushkin, S. A., Zeze, D. A. & Cirlin, G. E., 18 Jun 2018, In: Journal of Physics: Conference Series. 1038, 1, 012063.

    Research output: Contribution to journal › Conference article › peer-review

  7. GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells

    Alekseev, P. A., Sharov, V. A., Geydt, P., Dunaevskiy, M. S., Soshnikov, I. P., Reznik, R. R., Lysak, V. V., Lähderanta, E. & Cirlin, G. E., 1 May 2018, In: Semiconductors. 52, 5, p. 609-611 3 p.

    Research output: Contribution to journal › Article › peer-review

  8. MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates

    Reznik, R. R., Kotlyar, K. P., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V. & Cirlin, G. E., 1 May 2018, In: Semiconductors. 52, 5, p. 651-653 3 p.

    Research output: Contribution to journal › Article › peer-review

  9. Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy

    Reznik, R. R., Cirlin, G. E., Shtrom, I. V., Khrebtov, A. I., Soshnikov, I. P., Kryzhanovskaya, N. V., Moiseev, E. I. & Zhukov, A. E., 1 Feb 2018, In: Technical Physics Letters. 44, 2, p. 112-114 3 p.

    Research output: Contribution to journal › Article › peer-review

  10. New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles

    Bouravleuv, A., Ilkiv, I., Reznik, R., Kotlyar, K., Soshnikov, I., Cirlin, G. E., Brunkov, P., Kirilenko, D., Bondarenko, L., Nepomnyaschiy, A., Gruznev, D., Zotov, A., Saranin, A., Dhaka, V. & Lipsanen, H., 26 Jan 2018, In: Nanotechnology. 29, 4, 045602.

    Research output: Contribution to journal › Article › peer-review

  11. Temperature annealing effect on ITO film

    Kotlyar, K. P., Kudryashov, D. A., Soshnikov, I. P., Uvarov, A. V. & Reznik, R. R., 2018, In: Journal of Physics: Conference Series. 1124, 4, 041035.

    Research output: Contribution to journal › Conference article › peer-review

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