Abstract: An experimental study aimed at developing the method of the spontaneous synthesis of InGaN/GaN nanowires formed as radial heterostructures by molecular-beam epitaxy is reported. By means of electron microscopy, it is shown that a wedge-shaped crack can be formed at an In content x = 0.4 and 0.04 in the core and shell, respectively. On the basis of the model of internal structural stresses, a formula is proposed to estimate the critical dimensions and composition for the formation of cracks in nanowires. Comparison of the estimates with the experimental morphology data shows good agreement between them.

Original languageEnglish
Pages (from-to)795-798
Number of pages4
JournalSemiconductors
Volume55
Issue number10
DOIs
StatePublished - Oct 2021

    Research areas

  • axial heterostructures, gallium nitride, indium nitride, molecular-beam epitaxy, nanowires, stressed heterostructures

    Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

ID: 96850872