Research output

  1. Designing the orientation of GaN nanowires on Si(100) through pore geometry engineering

    Research output: Contribution to journal › Article › peer-review

  2. Topographically-Guided van der Waals Epitaxy: Selective Growth of AlN Nanowalls on h-BN Step Edges

    Research output: Contribution to journal › Article › peer-review

  3. Host-engineered carbon dot luminescence: integration with nanowires for photonics

    Research output: Contribution to journal › Article › peer-review

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Projects

  1. Непланарные III-V наноструктуры переменной размерности для полупроводниковой элементной базы нового поколения: 2026 г. этап 2

    Project: Grant fulfilment › Grant stage fulfilment

  2. Лаборатория новых полупроводниковых материалов для квантовой информатики и телекоммуникаций

    Project: Research groups

  3. Новые полупроводниковые материалы для квантовой информатики и телекоммуникаций: 2026 г. этап 5

    Project: Grant fulfilment › Grant stage fulfilment

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Activities

  1. Van der Waals Epitaxial Growth of AlN Nanowires on h-BN

    Activity: Conference talk types › poster

  2. Formation of p-type and n-type Si doped (Ga,Al)As nanowires

    Activity: Conference talk types › Oral presentation

  3. Epitaxial growth of AlN nanowires on two-dimensional h-BN flakes transferred onto SiO2/Si substrate

    Activity: Conference talk types › Oral presentation

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ID: 70430060