Research output

  1. Effect of GaAs buffer layer on the characteristics of GaAs NWs grown by molecular beam epitaxy on Si(111) substrates

    Research output: Contribution to journal › Conference article › peer-review

  2. MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions

    Research output: Contribution to journal › Conference article › peer-review

  3. Optical Characterization and Surface Plasmon Polariton Mode Simulation of GaN/InGaN Nanowires on Ag/AlOx Film for Plasmonic Nanolasers

    Research output: Contribution to journal › Conference article › peer-review

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Projects

  1. Лаборатория новых полупроводниковых материалов для квантовой информатики и телекоммуникаций

    Project: Research groups

  2. Новые полупроводниковые материалы для квантовой информатики и телекоммуникаций: 2026 г. этап 5

    Project: Grant fulfilment › Grant stage fulfilment

  3. Наноструктуры полупроводниковых соединений III-V с управляемой морфологией и расширенной областью состава для оптоэлектроники: 2026 г., этап 2

    Project: Grant fulfilment › Grant stage fulfilment

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Activities

  1. Van der Waals Epitaxial Growth of AlN Nanowires on h-BN

    Activity: Conference talk types › poster

  2. Formation of p-type and n-type Si doped (Ga,Al)As nanowires

    Activity: Conference talk types › Oral presentation

  3. Epitaxial growth of AlN nanowires on two-dimensional h-BN flakes transferred onto SiO2/Si substrate

    Activity: Conference talk types › Oral presentation

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ID: 70430060