Research output

  1. Topographically-Guided van der Waals Epitaxy: Selective Growth of AlN Nanowalls on h-BN Step Edges

    Research output: Contribution to journal › Article › peer-review

  2. Ultra-narrow linewidth blue plasmonic single mode nanolasing from MBE-grown GaN nanowires with embedded InGaN quantum wells

    Research output: Contribution to journal › Article › peer-review

  3. MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions

    Research output: Contribution to journal › Conference article › peer-review

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Projects

  1. Лаборатория новых полупроводниковых материалов для квантовой информатики и телекоммуникаций

    Project: Research groups

  2. Новые полупроводниковые материалы для квантовой информатики и телекоммуникаций: 2026 г. этап 5

    Project: Grant fulfilment › Grant stage fulfilment

  3. Новые наноструктурированные InGaN материалы: синтез, свойства и оптоэлектронные приложения: 2026 г. этап 4

    Project: Grant fulfilment › Grant stage fulfilment

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Activities

  1. Van der Waals Epitaxial Growth of AlN Nanowires on h-BN

    Activity: Conference talk types › poster

  2. III-N heterostructures in nanowires: synthesis, growth mechanisms and properties

    Activity: Conference talk types › Oral presentation

  3. Formation of p-type and n-type Si doped (Ga,Al)As nanowires

    Activity: Conference talk types › Oral presentation

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ID: 51861740