In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of separation super-dense arrays or arrays of partially-coalesced InGaN nanowires and single nanowires from a Si substrate by chemical etching in HF:HNO3 solution, which allows preserving the optical properties of the structure for further use.

Original languageEnglish
Article number012191
JournalJournal of Physics: Conference Series
Volume2086
Issue number1
DOIs
StatePublished - 6 Dec 2021
Event8th International School and Conference "Saint Petersburg OPEN 2021" on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021 - Saint Petersburg, Russian Federation
Duration: 25 May 202128 May 2021

    Scopus subject areas

  • Physics and Astronomy(all)

ID: 96851413