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  1. 2007

  2. Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding

    Yu, X., Vyvenko, O., Kittler, M., Seifert, W., Mitchedlidze, T., Arguirov, T. & Reiche, M., 2007, In: Semiconductors. 41, 4, p. 458-461

    Research output: Contribution to journal › Article

  3. Electrical levels of nanoscale NiSi2 precipitates in silicon band gap

    Trushin, M. V. & Vyvenko, O. F., 2007, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 4, 8, p. 3056-3060 5 p.

    Research output: Contribution to journal › Conference article › peer-review

  4. Impact of NiSi2 Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type Silicon

    Trushin, M. V., Vyvenko, O. F. & Michael, S., 2007, In: Solid State Phenomena. 131-133, p. 155-160

    Research output: Contribution to journal › Article

  5. Luminescence of dislocation network in directly bonded silicon wafers

    Yu, X., Kittler, M., Vyvenko, O. F., Seifert, W., Arguirov, T., Wilhelm, T. & Reiche, M., 2007, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 4, 8, p. 3025-3029 5 p.

    Research output: Contribution to journal › Conference article › peer-review

  6. Scanning probe studies of the electrical activity at interfaces formed by silicon wafer direct bonding

    Ratzke, M., Vyvenko, O., Yu, X., Reif, J., Kittler, M. & Reiche, M., 2007, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 4, 8, p. 2893-2897 5 p.

    Research output: Contribution to journal › Conference article › peer-review

  7. 2006

  8. Self-organized pattern formation of biomolecules at silicon surfaces: Intended application of a dislocation network

    Kittler, M., Vyvenko, O. F., Seifert, W., Reiche, M., Wilhelm, T., Arguirov, T. & Seibt, M., Jul 2006, In: Materials Science and Engineering C. 26, 5-7, p. 902-910 9 p.

    Research output: Contribution to journal › Article › peer-review

  9. 1.5 μ-m emission from a silicon MOS-LED based on a dislocation network

    Kittler, M., Arguirov, T., Vyvenko, O. F., Seifert, W., Mchedlidze, T., Jia, G. & Wilhelm, T., 2006, 2006 International Electron Devices Meeting Technical Digest, IEDM. 4154347. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  10. Regular dislocation networks in silicon as a tool for novel device application

    Kittler, M., Reiche, M., Seifert, W., Arguirov, T., Vyvenko, O. F., Mchedlidze, T. & Wilhelm, T., 2006, In: ECS Transactions. 3, 4, p. 429-450 22 p.

    Research output: Contribution to journal › Conference article › peer-review

  11. 2005

  12. Capacitance response due to recharging of extended defects attached to the edge of the space charge region of the Schottky diode

    Vyvenko, O., 2005, In: Physica Status Solidi C: Conferences. 2, 6, p. 1917-1923 7 p.

    Research output: Contribution to journal › Article › peer-review

  13. Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon

    Vyvenko, O. F., Bazlov, N. V., Trushin, M. V., Nadolinski, A. A., Seibt, M., Schröter, W. & Hahn, G., 2005, Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd, p. 279-284 6 p. (Solid State Phenomena; vol. 108-109).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

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