1.5 μ-m emission from a silicon MOS-LED based on a dislocation network

DOI

https://doi.org/10.1109/IEDM.2006.346912
Final published version

M. Kittler
T. Arguirov
O. F. Vyvenko
W. Seifert
T. Mchedlidze
G. Jia
T. Wilhelm

A novel Si MOS-LED is demonstrated, which is fully compatible with Si technology. It is based on a dislocation network fabricated by wafer direct bonding. Light emission at 1.5 μm was observed when the network was near the Si/SiO₂ interface close to/inside the accumulation layer induced by the gate voltage.

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346912
State	Published - 2006
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: 10 Dec 2006 → 13 Dec 2006

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2006 International Electron Devices Meeting, IEDM
Country/Territory	United States
City	San Francisco, CA
Period	10/12/06 → 13/12/06

Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

ID: 87673986