Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as "band-like" or "localized". In both n- and p-type samples DLTS-peak in the initial as quenched samples showed band-like behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial "band-like" behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20μm.
Original language | English |
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Title of host publication | Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting |
Publisher | Trans Tech Publications Ltd |
Pages | 279-284 |
Number of pages | 6 |
ISBN (Print) | 3908451132, 9783908451136 |
DOIs | |
State | Published - 2005 |
Event | 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 - Giens, France Duration: 25 Sep 2005 → 30 Sep 2005 |
Name | Solid State Phenomena |
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Volume | 108-109 |
ISSN (Print) | 1012-0394 |
Conference | 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 |
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Country/Territory | France |
City | Giens |
Period | 25/09/05 → 30/09/05 |
ID: 75076676