Research output: Contribution to journal › Conference article › peer-review
Electric levels of NiSi2 nanoprecipitates in n- and p-type Si were studied by means of deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) The shapes of MCTS spectra of as-quenched as well as annealed p-type samples were found to be similar whereas they differ qualitatively in n-type samples. Experimental results are discussed using energetic diagram of electrical levels of NiSi2 nanoprecipitates in the Si band gap.
| Original language | English |
|---|---|
| Pages (from-to) | 3056-3060 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 4 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2007 |
| Event | International Conference on Extended Defects in Semiconductors, EDS 2006 - Halle, Germany Duration: 17 Sep 2006 → 22 Sep 2006 |
ID: 87672893