171 - 180 out of 194Page size: 10
  1. 2002

  2. Defect recognition and impurity detection techniques in crystalline silicon for solar cells

    Istratov, A. A., Hieslmair, H., Vyvenko, O. F., Weber, E. R. & Schindler, R., 1 Apr 2002, In: Solar Energy Materials and Solar Cells. 72, 1-4, p. 441-451 11 p.

    Research output: Contribution to journal › Article › peer-review

  3. X-ray beam induced current - A synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon

    Vyvenko, O. F., Buonassisi, T., Istratov, A. A., Hieslmair, H., Thompson, A. C., Schindler, R. & Weber, E. R., 15 Mar 2002, In: Journal of Applied Physics. 91, 6, p. 3614-3617 4 p.

    Research output: Contribution to journal › Article › peer-review

  4. Application of X-ray synchrotron techniques to the characterization of the chemical nature and recombination activity of grown-in and process-induced defects and impurities in solar cells

    Buonassisi, T., Vyvenko, O. F., Istratov, A. A., Weber, E. R. & Schindler, R., 1 Jan 2002, In: Materials Research Society Symposium - Proceedings. 719, p. 179-184 6 p.

    Research output: Contribution to journal › Article › peer-review

  5. 2001

  6. Depth profiling of the recombination activity of defects measured by temperature-dependent cross-sectional EBIC

    Vyvenko, O., Krüger, O. & Kittler, M., 1 Jan 2001, In: Solid State Phenomena. 78-79, p. 65-72 8 p.

    Research output: Contribution to journal › Article › peer-review

  7. 2000

  8. Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment

    Vyvenko, O. F., Krüger, O. & Kittler, M., 7 Feb 2000, In: Applied Physics Letters. 76, 6, p. 697-699 3 p.

    Research output: Contribution to journal › Article › peer-review

  9. Extension of hydrogen passivation of intragrain defects and grain boundaries in cast multicrystalline silicon

    Krüger, O., Seifert, W., Kittler, M. & Vyvenko, O. F., 1 Jan 2000, In: Physica Status Solidi (B) Basic Research. 222, 1, p. 367-378 12 p.

    Research output: Contribution to journal › Article › peer-review

  10. 1999

  11. Exponential analysis in physical phenomena

    Istratov, A. A. & Vyvenko, O. F., 1 Jan 1999, In: Review of Scientific Instruments. 70, 2, p. 1233-1257 25 p.

    Research output: Contribution to journal › Review article › peer-review

  12. 1998

  13. Critical analysis of weighting functions for the deep level transient spectroscopy of semiconductors

    Istratov, A. A., Vyvenko, O. F., Hieslmair, H. & Weber, E. R., 1 Jan 1998, In: Measurement Science and Technology. 9, 3, p. 477-484 8 p.

    Research output: Contribution to journal › Article › peer-review

  14. Electrical and recombination properties of copper-suicide precipitates in silicon

    Istratov, A. A., Hedemann, H., Seibt, M., Vyvenko, O. F., Schröter, W., Heiser, T., Flink, C., Hieslmair, H. & Weber, E. R., 1 Jan 1998, In: Journal of the Electrochemical Society. 145, 11, p. 3889-3898 10 p.

    Research output: Contribution to journal › Article › peer-review

  15. Minority carrier transient spectroscopy of copper-silicide and nickel-disilicide precipitates in silicon

    Vyvenko, O. F., 1 Jan 1998, In: Solid State Phenomena. 63-64, p. 301-310 10 p.

    Research output: Contribution to journal › Article › peer-review

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