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  1. 1997

  2. Nature of dislocation-related deep level defects in CdS

    Istratov, A. A. & Vyvenko, O. F., 1 Jan 1997, In: Materials Science Forum. 258-263, 9993, p. 1359-1364 6 p.

    Research output: Contribution to journal › Article › peer-review

  3. 1996

  4. DX-like center generated by uniaxial strains of screw dislocations in CdS

    Istratov, A. A. & Vyvenko, O. F., 15 Oct 1996, In: Journal of Applied Physics. 80, 8, p. 4400-4410 11 p.

    Research output: Contribution to journal › Article › peer-review

  5. DX-like centers in dislocated compound semiconductors: A new aspect of the interaction between extended defects and impurities

    Istratov, A. A. & Vyvenko, O. F., 1 Jan 1996, In: Solid State Phenomena. 47-48, p. 319-324 6 p.

    Research output: Contribution to journal › Article › peer-review

  6. 1994

  7. Cathodoluminescence imaging of dislocations in CdS: a new defocused-mirror technique

    Vyvenko, O., Zozime, A. & Schröter, W., 1 Jan 1994, In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 24, 1-3, p. 105-111 7 p.

    Research output: Contribution to journal › Article › peer-review

  8. Effect of the oxygen pressure during annealing on Tc and lattice parameter c of Bi‐2212 single crystals

    Vlasov, M. Y., Kaminskaya, T. N., Moshkin, S. V., Frank‐Kamenetskaya, O. V., Vyvenko, O. F. & Kretser, Y. L., 1994, In: Crystal Research and Technology. 29, 1, p. 113-117 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. 1993

  10. A new method to investigate separately the properties of screw and edge dislocations in II‐VI compound semiconductors

    Vyvenko, O. F. & Istratov, A. A., 16 Aug 1993, In: physica status solidi (a). 138, 2, p. 715-721 7 p.

    Research output: Contribution to journal › Article › peer-review

  11. 1992

  12. SCALING OF THE ENERGY GAP WITH TC IN BI2SR2CACU2O8+Δ

    Simmons, C. T., Molodtsov, S. L., Fedoseenko, S. I., Allman, J. C., Laubschat, C., Kaindl, G., Moshikin, S. V., Kuzmina, M. A., Vlasov, M. U. & Vyvenko, O. F., 1992, In: Zeitschrift fur Physik B-Condensed Matter. 87, 3, p. 271-273

    Research output: Contribution to journal › Article

  13. 1987

  14. UNIVERSAL CAPACITIVE SPECTROMETER FOR MEASURING THE PARAMETERS OF DEEP CENTERS IN SEMICONDUCTORS AND MOS STRUCTURES.

    Bazlov, N. V., Vyvenko, O. F. & Tul'ev, A. V., May 1987, In: Instruments and experimental techniques New York. 30, 3 pt 2, p. 696-701 6 p.

    Research output: Contribution to journal › Article › peer-review

  15. 1986

  16. DEEP LEVELS DUE TO DISLOCATIONS IN CdS.

    Vyvenko, O. F., Bazlov, N. V. & Tul'ev, A. V., 1986, In: Bulletin of the Academy of Sciences of the U.S.S.R. Physical series. 51, 4, p. 39-43 5 p.

    Research output: Contribution to journal › Conference article › peer-review

  17. 1984

  18. POINT-DEFECT CLOUDS AT LOW-ANGLE BOUNDARIES IN CADMIUM SULPHIDE.

    Vyvenko, O. F. & Schroeter, W., 1 Jan 1984, In: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 50, 4

    Research output: Contribution to journal › Article › peer-review

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