171 - 180 out of 192Page size: 10
  1. 2002

  2. Application of X-ray synchrotron techniques to the characterization of the chemical nature and recombination activity of grown-in and process-induced defects and impurities in solar cells

    Buonassisi, T., Vyvenko, O. F., Istratov, A. A., Weber, E. R. & Schindler, R., 1 Jan 2002, In: Materials Research Society Symposium - Proceedings. 719, p. 179-184 6 p.

    Research output: Contribution to journal › Article › peer-review

  3. 2001

  4. Depth profiling of the recombination activity of defects measured by temperature-dependent cross-sectional EBIC

    Vyvenko, O., Krüger, O. & Kittler, M., 1 Jan 2001, In: Solid State Phenomena. 78-79, p. 65-72 8 p.

    Research output: Contribution to journal › Article › peer-review

  5. 2000

  6. Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment

    Vyvenko, O. F., Krüger, O. & Kittler, M., 7 Feb 2000, In: Applied Physics Letters. 76, 6, p. 697-699 3 p.

    Research output: Contribution to journal › Article › peer-review

  7. Extension of hydrogen passivation of intragrain defects and grain boundaries in cast multicrystalline silicon

    Krüger, O., Seifert, W., Kittler, M. & Vyvenko, O. F., 1 Jan 2000, In: Physica Status Solidi (B) Basic Research. 222, 1, p. 367-378 12 p.

    Research output: Contribution to journal › Article › peer-review

  8. 1999

  9. Exponential analysis in physical phenomena

    Istratov, A. A. & Vyvenko, O. F., 1 Jan 1999, In: Review of Scientific Instruments. 70, 2, p. 1233-1257 25 p.

    Research output: Contribution to journal › Review article › peer-review

  10. 1998

  11. Critical analysis of weighting functions for the deep level transient spectroscopy of semiconductors

    Istratov, A. A., Vyvenko, O. F., Hieslmair, H. & Weber, E. R., 1 Jan 1998, In: Measurement Science and Technology. 9, 3, p. 477-484 8 p.

    Research output: Contribution to journal › Article › peer-review

  12. Electrical and recombination properties of copper-suicide precipitates in silicon

    Istratov, A. A., Hedemann, H., Seibt, M., Vyvenko, O. F., Schröter, W., Heiser, T., Flink, C., Hieslmair, H. & Weber, E. R., 1 Jan 1998, In: Journal of the Electrochemical Society. 145, 11, p. 3889-3898 10 p.

    Research output: Contribution to journal › Article › peer-review

  13. Minority carrier transient spectroscopy of copper-silicide and nickel-disilicide precipitates in silicon

    Vyvenko, O. F., 1 Jan 1998, In: Solid State Phenomena. 63-64, p. 301-310 10 p.

    Research output: Contribution to journal › Article › peer-review

  14. 1997

  15. Nature of dislocation-related deep level defects in CdS

    Istratov, A. A. & Vyvenko, O. F., 1 Jan 1997, In: Materials Science Forum. 258-263, 9993, p. 1359-1364 6 p.

    Research output: Contribution to journal › Article › peer-review

  16. 1996

  17. DX-like center generated by uniaxial strains of screw dislocations in CdS

    Istratov, A. A. & Vyvenko, O. F., 15 Oct 1996, In: Journal of Applied Physics. 80, 8, p. 4400-4410 11 p.

    Research output: Contribution to journal › Article › peer-review

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