21 - 30 out of 37Page size: 10
  1. 2018

  2. Фоточувствительное устройство и способ его изготовления.

    Котляр, К. П., Кукушкин, С. А., Осипов, А. В., Резник, Р. Р., Сошников, И. П. & Цырлин, Г. Э., 26 Jul 2018, Patent No. RU 2685032

    Research output: Patenting and IP registration › Patent

  3. MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate

    Reznik, R. R., Shtrom, I. V., Soshnikov, I. P., Kukushkin, S. A., Zeze, D. A. & Cirlin, G. E., 18 Jun 2018, In: Journal of Physics: Conference Series. 1038, 1, 012063.

    Research output: Contribution to journal › Conference article › peer-review

  4. Способ получения пластины монокристалла нитрида галлия.

    Буравлев, А. Д., Кукушкин, С. А., Осипов, А. В., Лукьянов, А. В., Тимошнев, С. Н. & Шарофидинов, Ш. Ш., 6 Jun 2018, Patent No. RU 2683103

    Research output: Patenting and IP registration › Patent

  5. MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates

    Reznik, R. R., Kotlyar, K. P., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V. & Cirlin, G. E., 1 May 2018, In: Semiconductors. 52, 5, p. 651-653 3 p.

    Research output: Contribution to journal › Article › peer-review

  6. Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

    Cirlin, G. E., Reznik, R. R., Shtrom, I. V., Khrebtov, A. I., Samsonenko, Y. B., Kukushkin, S. A., Kasama, T., Akopian, N. & Leonardo, L., 1 Apr 2018, In: Semiconductors. 52, 4, p. 462-464 3 p.

    Research output: Contribution to journal › Article › peer-review

  7. MBE Growth and Optical Properties of GaN, InN, and A3B5 Nanowires on SiC/Si(111) Hybrid Substrate

    Reznik, R. R., Kotlyar, K. P., Ilkiv, I. V., Khrebtov, A. I., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., Nikitina, E. V. & Cirlin, G. E., 2018, In: Advances in Condensed Matter Physics. 2018, 1040689.

    Research output: Contribution to journal › Article › peer-review

  8. 2017

  9. MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate

    Reznik, R. R., Kotlyar, K. P., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., Nikitina, E. V. & Cirlin, G. E., 23 Nov 2017, In: Journal of Physics: Conference Series. 917, 3, 032014.

    Research output: Contribution to journal › Conference article › peer-review

  10. AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

    Cirlin, G. E., Reznik, R. R., Shtrom, I. V., Khrebtov, A. I., Soshnikov, I. P., Kukushkin, S. A., Leandro, L., Kasama, T. & Akopian, N., 8 Nov 2017, In: Journal of Physics D: Applied Physics. 50, 48, 484003.

    Research output: Contribution to journal › Article › peer-review

  11. MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

    Reznik, R. R., Kotlyar, K. P., Shtrom, I. V., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V. & Cirlin, G. E., 1 Nov 2017, In: Semiconductors. 51, 11, p. 1472-1476 5 p.

    Research output: Contribution to journal › Article › peer-review

  12. 2016

  13. Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy

    Reznik, R. R., Kotlyar, K. P., Il’kiv, I. V., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., Nikitina, E. V. & Cirlin, G. E., 1 Oct 2016, In: Physics of the Solid State. 58, 10, p. 1952-1955 4 p.

    Research output: Contribution to journal › Article › peer-review

Previous 1 2 3 4 Next

ID: 70430167