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  1. 2018

  2. Способ получения пластины монокристалла нитрида галлия.

    Буравлев, А. Д., Кукушкин, С. А., Осипов, А. В., Лукьянов, А. В., Тимошнев, С. Н. & Шарофидинов, Ш. Ш., 6 Jun 2018, Patent No. RU 2683103

    Research output: Patenting and IP registration › Patent

  3. MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates

    Reznik, R. R., Kotlyar, K. P., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V. & Cirlin, G. E., 1 May 2018, In: Semiconductors. 52, 5, p. 651-653 3 p.

    Research output: Contribution to journal › Article › peer-review

  4. Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

    Cirlin, G. E., Reznik, R. R., Shtrom, I. V., Khrebtov, A. I., Samsonenko, Y. B., Kukushkin, S. A., Kasama, T., Akopian, N. & Leonardo, L., 1 Apr 2018, In: Semiconductors. 52, 4, p. 462-464 3 p.

    Research output: Contribution to journal › Article › peer-review

  5. MBE Growth and Optical Properties of GaN, InN, and A3B5 Nanowires on SiC/Si(111) Hybrid Substrate

    Reznik, R. R., Kotlyar, K. P., Ilkiv, I. V., Khrebtov, A. I., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., Nikitina, E. V. & Cirlin, G. E., 2018, In: Advances in Condensed Matter Physics. 2018, 1040689.

    Research output: Contribution to journal › Article › peer-review

  6. 2017

  7. MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate

    Reznik, R. R., Kotlyar, K. P., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., Nikitina, E. V. & Cirlin, G. E., 23 Nov 2017, In: Journal of Physics: Conference Series. 917, 3, 032014.

    Research output: Contribution to journal › Conference article › peer-review

  8. AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

    Cirlin, G. E., Reznik, R. R., Shtrom, I. V., Khrebtov, A. I., Soshnikov, I. P., Kukushkin, S. A., Leandro, L., Kasama, T. & Akopian, N., 8 Nov 2017, In: Journal of Physics D: Applied Physics. 50, 48, 484003.

    Research output: Contribution to journal › Article › peer-review

  9. MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

    Reznik, R. R., Kotlyar, K. P., Shtrom, I. V., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V. & Cirlin, G. E., 1 Nov 2017, In: Semiconductors. 51, 11, p. 1472-1476 5 p.

    Research output: Contribution to journal › Article › peer-review

  10. 2016

  11. Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy

    Reznik, R. R., Kotlyar, K. P., Il’kiv, I. V., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., Nikitina, E. V. & Cirlin, G. E., 1 Oct 2016, In: Physics of the Solid State. 58, 10, p. 1952-1955 4 p.

    Research output: Contribution to journal › Article › peer-review

  12. The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires

    Reznik, R. R., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., Nikitina, E. V. & Cirlin, G. E., 15 Sep 2016, In: Journal of Physics: Conference Series. 741, 1, 012027.

    Research output: Contribution to journal › Conference article › peer-review

  13. MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate

    Reznik, R. R., Kotlyar, K. P., Ilkiv, I. V., Kukushkin, S. A., Osipov, A. V., Soshnikov, I. P., Nikitina, E. V. & Cirlin, G. E., 23 Aug 2016, Proceedings - 2016 International Conference Laser Optics, LO 2016. Institute of Electrical and Electronics Engineers Inc., p. R92 7549902. (Proceedings - 2016 International Conference Laser Optics, LO 2016).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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