The possibility of GaN, InN, and A³B⁵ nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs without silicon carbide buffer layer. The diameter of A³B⁵ NWs is smaller than diameter of similar NWs which were grown on a silicon substrate, because of higher lattice mismatch. In particular, InAs NWs diameter was evaluated as little as 10 nm, one of the smallest ever demonstrated for this NWs system.