<p num="44">FIELD: electrical engineering.</p> <p num="45">SUBSTANCE: group of inventions relates to the technology of solid-state electronics and can be used in developing photodetectors of the visible and near infrared range. Photosensitive device has an electrode and a photosensitive layer structure formed on it, having a silicon substrate with p-type conductivity, having a surface with crystallographic orientation (111), with a layer of silicon carbide formed thereon. On SiC layer there is a planarizing layer of dielectric from light-transmitting polymer. Planarizing layer comprises an array of nanorods GaN pre-synthesized on a SiC layer and oriented perpendicular to the substrate; a light-transmissive electrode is formed on the planarizing layer, which provides electrical contact with the nanorods. Layers of the device are formed in stages. First, SiC is formed on a silicon substrate having a surface with crystallographic orientation (111) by substitution of atoms to form carbon-vacancy structures, th