Research output: Contribution to journal › Conference article › peer-review
The possibility of AlGaAs nanowires MBE growth on a silicon substrate with a nanometer silicon carbide buffer layer was demonstrated for the first time. Under the same experimental conditions (including the same composition), the diameter of the AlGaAs/SiC/Si nanowires are smaller than nanowires diameter grown on a silicon substrate. Based on the photoluminescence analysis suggests that when AlGaAs/SiC/Si NWs are grown, a physical complex structure appears due to the self-organized formation of regions with different molar fractions of aluminum in the solid solution.
Original language | English |
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Article number | 012063 |
Journal | Journal of Physics: Conference Series |
Volume | 1038 |
Issue number | 1 |
DOIs | |
State | Published - 18 Jun 2018 |
Event | International Conference PhysicA.SPb 2017 - Saint-Petersburg, Russian Federation Duration: 24 Oct 2017 → 26 Oct 2017 |
ID: 98508206