The fundamental possibility of the growth of GaN layers by molecular-beam epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN layers has been demonstrated for the first time. Morphological properties of the resulting system have been studied.

Original languageEnglish
Article number032014
JournalJournal of Physics: Conference Series
Volume917
Issue number3
DOIs
StatePublished - 23 Nov 2017
Event4th International School and Conference "Saint Petersburg OPEN 2017" on Optoelectronics, Photonics, Engineering and Nanostructures - Saint-Petersburg, Russian Federation
Duration: 3 Apr 20176 Apr 2017

    Scopus subject areas

  • Physics and Astronomy(all)

ID: 99721057