Research output: Contribution to journal › Conference article › peer-review
The fundamental possibility of the growth of GaN layers by molecular-beam epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN layers has been demonstrated for the first time. Morphological properties of the resulting system have been studied.
| Original language | English |
|---|---|
| Article number | 032014 |
| Journal | Journal of Physics: Conference Series |
| Volume | 917 |
| Issue number | 3 |
| DOIs | |
| State | Published - 23 Nov 2017 |
| Event | 4th International School and Conference "Saint Petersburg OPEN 2017" on Optoelectronics, Photonics, Engineering and Nanostructures - Saint-Petersburg, Russian Federation Duration: 3 Apr 2017 → 6 Apr 2017 |
ID: 99721057