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  1. 2024

  2. Control of Ge island coalescence for the formation of nanowires on silicon: Nanoscale Horizons

    Ramanandan, S. P., Reñé Sapera, J., Morelle, A., Martí-Sánchez, S., Rudra, A., Arbiol, J., Dubrovskii, V. G. & Fontcuberta i Morral, A., 25 Mar 2024, In: Nanoscale Horiz.. 9, 4, p. 555-565 11 p.

    Research output: Contribution to journal › Article › peer-review

  3. 2023

  4. Can nanowires coalesce?

    Дубровский, В. Г., 16 Oct 2023, In: Nanomaterials. 13, 20, 2768.

    Research output: Contribution to journal › Article › peer-review

  5. Uniformly dispersing and anchoring graphene on GaN nanowire substrate: Application to electrochemical detection of glucose in sweat

    Chen, S., Yu, J., Zhang, J., Huang, H., Xiao, H., Tang, Y., Dubrovskii, V. G., Liu, H., Xia, P. & Chen, Z., 16 Oct 2023, In: Applied Physics Letters. 123, 16, 163702 .

    Research output: Contribution to journal › Article › peer-review

  6. Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers

    Olszewski, K., Sobanska, M., Dubrovskii, V. G., Leshchenko, E. D., Wierzbicka, A. & Zytkiewicz, Z. R., 19 Sep 2023, In: Nanomaterials. 13, 18, 2587.

    Research output: Contribution to journal › Article › peer-review

  7. Composition of vapor-liquid-solid III-V ternary nanowires based on group III intermix

    Дубровский, В. Г., 11 Sep 2023, In: Nanomaterials. 13, 18, 2532.

    Research output: Contribution to journal › Article › peer-review

  8. Planar vs Non-Planar Orientation in AuAg-Catalyzed InP Nanowire Growth

    Zavarize, M., Sibirev, N. V., Berdnikov, Y., Moreira, M., Obata, H. T., Rodrigues, V., Dubrovskii, V. G. & Cotta, M. A., 22 Aug 2023, In: Crystal Growth and Design. 23, 9, p. 6623–6630 8 p.

    Research output: Contribution to journal › Article › peer-review

  9. Composition of III-V ternary materials under arbitrary material fluxes: the general approach unifying kinetics and thermodynamics

    Дубровский, В. Г. & Лещенко, Е. Д., 14 Jul 2023, In: Physical Review Materials. 7, 7, 074603 .

    Research output: Contribution to journal › Article › peer-review

  10. From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

    Morgan, N., Dubrovskii, V. G., Stief, A-K., Dede, D., Sanglé-Ferrière, M., Rudra, A., Piazza, V. & Fontcuberta i Morral, A., 5 Jul 2023, In: Crystal Growth and Design. 23, 7, p. 5083–5092 10 p.

    Research output: Contribution to journal › Article › peer-review

  11. Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions

    Diak, E., Thomas, A., Dubrovskii, V. G. & LaPierre, R. R., 9 Jun 2023, In: Crystal Growth and Design. 23, 7, p. 5074–5082

    Research output: Contribution to journal › Article › peer-review

  12. Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

    Chereau, E., Dubrovskii, V. G., Gregoire, G., Avit, G., Staudinger, P., Shmid, H., Bougerol, C., Coulon, P-M., Shields, P., Trassoudaine, A., Gil, E., LaPierre, R. R. & Andre, Y., 22 May 2023, In: Crystal Growth and Design. 23, 6, p. 4401-4409 9 p.

    Research output: Contribution to journal › Article › peer-review

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