Research output

  1. Designing the orientation of GaN nanowires on Si(100) through pore geometry engineering

    Research output: Contribution to journal › Article › peer-review

  2. Formation of Hexagonal Pedestals in Si-doped GaN Layers Grown on AlN/Si(111) Templates

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  3. Topographically-Guided van der Waals Epitaxy: Selective Growth of AlN Nanowalls on h-BN Step Edges

    Research output: Contribution to journal › Article › peer-review

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Projects

  1. Полупроводниковые наногетероструктуры для приложений нового поколения, этап 1. 2027 г.

    Project: Grant fulfilment › Grant stage fulfilment

  2. Непланарные III-V наноструктуры переменной размерности для полупроводниковой элементной базы нового поколения: 2026 г. этап 2

    Project: Grant fulfilment › Grant stage fulfilment

  3. Лаборатория новых полупроводниковых материалов для квантовой информатики и телекоммуникаций

    Project: Research groups

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Activities

  1. Формирование разориентированных микроструктур фторида алюминия

    Activity: Conference talk types › poster

  2. Size-dependent properties of InAs quantum dots in Si

    Activity: Conference talk types › Oral presentation

  3. Size-dependent properties of InAs quantum dots in Si

    Activity: Conference talk types › poster

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ID: 93711369