Research output

  1. Topographically-Guided van der Waals Epitaxy: Selective Growth of AlN Nanowalls on h-BN Step Edges

    Research output: Contribution to journal › Article › peer-review

  2. Effect of GaAs buffer layer on the characteristics of GaAs NWs grown by molecular beam epitaxy on Si(111) substrates

    Research output: Contribution to journal › Conference article › peer-review

  3. Optical Characterization and Surface Plasmon Polariton Mode Simulation of GaN/InGaN Nanowires on Ag/AlOx Film for Plasmonic Nanolasers

    Research output: Contribution to journal › Conference article › peer-review

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Projects

  1. Лаборатория новых полупроводниковых материалов для квантовой информатики и телекоммуникаций

    Project: Research groups

  2. Новые полупроводниковые материалы для квантовой информатики и телекоммуникаций: 2026 г. этап 5

    Project: Grant fulfilment › Grant stage fulfilment

  3. Новые наноструктурированные InGaN материалы: синтез, свойства и оптоэлектронные приложения: 2026 г. этап 4

    Project: Grant fulfilment › Grant stage fulfilment

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Activities

  1. Формирование разориентированных микроструктур фторида алюминия

    Activity: Conference talk types › poster

  2. Size-dependent properties of InAs quantum dots in Si

    Activity: Conference talk types › Oral presentation

  3. Size-dependent properties of InAs quantum dots in Si

    Activity: Conference talk types › poster

View all (8) »

ID: 93711369