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  1. 2022

  2. Half-disk lasers with active region based on InGaAs/GaAs quantum well-dots

    Zubov, F. I., Moiseev, E. I., Maximov, M. V., Vorobyev, A. A., Mozharov, A. M., Shernyakov, Y. M., Kalyuzhnyy, N. A., Mintairov, S. A., Kulagina, M. M., Dubrovskii, V. G., Kryzhanovskaya, N. V. & Zhukov, A. E., 1 Dec 2022, In: Laser Physics. 32, 12, 5 p., 125802.

    Research output: Contribution to journal › Article › peer-review

  3. Моделирование роста заостренных нитевидных нанокристаллов на маскированных подложках

    Лещенко, Е. Д. & Дубровский, В. Г., Dec 2022, In: ПИСЬМА В "ЖУРНАЛ ТЕХНИЧЕСКОЙ ФИЗИКИ". 48, 23, p. 14-17

    Research output: Contribution to journal › Article › peer-review

  4. Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

    Dede, D., Glas, F., Piazza, V., Morgan, N., Friedl, M., Güniat, L., Nur Dayi, E., Balgarkashi, A., Dubrovskii, V. G. & Fontcuberta i Morral, A., 26 Nov 2022, In: Nanotechnology. 33, 48, 485604.

    Research output: Contribution to journal › Article › peer-review

  5. Tapering-free monocrystalline Ge nanowires synthesized via plasma-assisted VLS using in and Sn catalysts

    Tang, J., Wang, J., Maurice, J. L., Chen, W., Foldyna, M., Yu, L., Leshchenko, E. D., Dubrovskii, V. G. & Cabarrocas, P. R. I., 1 Oct 2022, In: Nanotechnology. 33, 40, 405602.

    Research output: Contribution to journal › Article › peer-review

  6. Criterion for selective area growth of III-V nanowires

    Дубровский, В. Г., Oct 2022, In: Nanomaterials. 12, 20, 3698.

    Research output: Contribution to journal › Article › peer-review

  7. Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory

    Gridchin, V. O., Dvoretckaia, L. N., Kotlyar, K. P., Reznik, R. R., Parfeneva, A. V., Dragunova, A. S., Kryzhanovskaya, N. V., Dubrovskii, V. G. & Cirlin, G. E., 8 Jul 2022, In: Nanomaterials. 12, 14, 2341.

    Research output: Contribution to journal › Article › peer-review

  8. Hexagonal Ge on the side facets of GaAs and AlGaAs nanowires

    Ilkiv, I. V., Kotlyar, K. P., Kirilenko, D. A., Soshnikov, I. P., Mikushev, S. V., Dubrovskii, V. G. & Cirlin, G. E., Jul 2022, 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., p. 1-1

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  9. Droplet contact angle controlling the morphology and crystal phase of GaAs and GaP nanowires

    Dubrovskii, V. G., Sibirev, N. V., Fedorov, V. V., Dvoretckaia, L. N., Kirilenko, D. A., Mukhin, I. S., Ghukasyan, A., Goktas, N. I. & Lapierre, R. R., 20 Jun 2022, 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., (2022 International Conference Laser Optics, ICLO 2022 - Proceedingss).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  10. Growth of III-V nanowires by molecular beam epitaxy: the role of material exchange with the substrate

    Sibirev, N. V. & Dubrovskii, V. G., 20 Jun 2022, 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., (2022 International Conference Laser Optics (ICLO)).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  11. Enhancing the incorporation of Sn in vapor-liquid-solid GeSn nanowires by modulation of the droplet composition

    Zeghouane, M., Hijazi, H., Bassani, F., Lefevre, G., Martinez, E., Luciani, T., Gentile, P., Dubrovskii, V. G. & Salem, B., 11 Jun 2022, In: Nanotechnology. 33, 24, 245605.

    Research output: Contribution to journal › Article › peer-review

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