1. 2021
  2. Reconsideration of nanowire growth theory at low temperatures

    Dubrovskii, V. G., 13 Sep 2021, In: Nanomaterials. 11, 9, 10 p., 2378.

    Research output: Contribution to journalArticlepeer-review

  3. Modeling the Shape Evolution of Selective Area Grown Zn3P2Nanoislands

    Dubrovskii, V. G., Steinvall, S. E., De Mestral, V., Paul, R., Leran, J. B., Zamani, M., Stutz, E. Z. & Fontcuberta I Morral, A., 4 Aug 2021, In: Crystal Growth and Design. 21, 8, p. 4732-4737 6 p.

    Research output: Contribution to journalArticlepeer-review

  4. Formation of Hexagonal Ge Stripes on the Side Facets of AlGaAs Nanowires: Implications for Near-Infrared Detectors

    Ilkiv, I. V., Kotlyar, K. P., Kirilenko, D. A., Osipov, A. V., Soshnikov, I. P., Mikushev, S. V., Dubrovskii, V. G. & Cirlin, G. E., 14 Jul 2021, In: ACS Applied Nano Materials. 4, 7, p. 7289-7294 6 p.

    Research output: Contribution to journalArticlepeer-review

  5. Dynamics of monolayer growth in vapor–liquid–solid gaas nanowires based on surface energy minimization

    Hijazi, H. & Dubrovskii, V. G., Jul 2021, In: Nanomaterials. 11, 7, 7 p., 1681.

    Research output: Contribution to journalArticlepeer-review

  6. Improving the yield of GaAs nanowires on silicon by Ga pre-deposition

    Wilson, D. P., Dubrovskii, V. G. & Lapierre, R. R., 25 Jun 2021, In: Nanotechnology. 32, 26, 7 p., 265301.

    Research output: Contribution to journalArticlepeer-review

  7. Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy

    Hijazi, H., Zeghouane, M., Jridi, J., Gil, E., Castelluci, D., Dubrovskii, V. G., Bougerol, C., Andre, Y. & Trassoudaine, A., 9 Apr 2021, In: Nanotechnology. 32, 15, 7 p., 155601.

    Research output: Contribution to journalArticlepeer-review

  8. Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

    Dubrovskii, V. G., Kim, W., Piazza, V., Güniat, L. & Fontcuberta I Morral, A., 5 Apr 2021, In: Nano Letters. 21, 7, p. 3139-3145 7 p.

    Research output: Contribution to journalArticlepeer-review

  9. Kinetics of guided growth of horizontal gan nanowires on flat and faceted sapphire surfaces

    Rothman, A., Maniš, J., Dubrovskii, V. G., Šikola, T., Mach, J. & Joslevich, E., 3 Mar 2021, In: Nanomaterials. 11, 3, p. 1-9 9 p., 624.

    Research output: Contribution to journalArticlepeer-review

  10. Conformal Growth of Radial InGaAs Quantum Wells in GaAs Nanowires

    Goktas, N. I., Dubrovskii, V. G. & Lapierre, R. R., 26 Jan 2021, In: Journal of Physical Chemistry Letters. 12, 4, p. 1275-1283 9 p.

    Research output: Contribution to journalArticlepeer-review

  11. Long catalyst-free InAs nanowires grown on silicon by HVPE

    Grégoire, G., Gil, E., Zeghouane, M., Bougerol, C., Hijazi, H., Castelluci, D., Dubrovskii, V. G., Trassoudaine, A., Goktas, N. I., Lapierre, R. R. & André, Y., 14 Jan 2021, In: CrystEngComm. 23, 2, p. 378-384 7 p.

    Research output: Contribution to journalArticlepeer-review

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