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  1. 2021

  2. Improving the yield of GaAs nanowires on silicon by Ga pre-deposition

    Wilson, D. P., Dubrovskii, V. G. & Lapierre, R. R., 25 Jun 2021, In: Nanotechnology. 32, 26, 7 p., 265301.

    Research output: Contribution to journal › Article › peer-review

  3. Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy

    Hijazi, H., Zeghouane, M., Jridi, J., Gil, E., Castelluci, D., Dubrovskii, V. G., Bougerol, C., Andre, Y. & Trassoudaine, A., 9 Apr 2021, In: Nanotechnology. 32, 15, 7 p., 155601.

    Research output: Contribution to journal › Article › peer-review

  4. Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

    Dubrovskii, V. G., Kim, W., Piazza, V., Güniat, L. & Fontcuberta I Morral, A., 5 Apr 2021, In: Nano Letters. 21, 7, p. 3139-3145 7 p.

    Research output: Contribution to journal › Article › peer-review

  5. Kinetics of guided growth of horizontal gan nanowires on flat and faceted sapphire surfaces

    Rothman, A., Maniš, J., Dubrovskii, V. G., Šikola, T., Mach, J. & Joslevich, E., 3 Mar 2021, In: Nanomaterials. 11, 3, p. 1-9 9 p., 624.

    Research output: Contribution to journal › Article › peer-review

  6. Conformal Growth of Radial InGaAs Quantum Wells in GaAs Nanowires

    Goktas, N. I., Dubrovskii, V. G. & Lapierre, R. R., 26 Jan 2021, In: Journal of Physical Chemistry Letters. 12, 4, p. 1275-1283 9 p.

    Research output: Contribution to journal › Article › peer-review

  7. Long catalyst-free InAs nanowires grown on silicon by HVPE

    Grégoire, G., Gil, E., Zeghouane, M., Bougerol, C., Hijazi, H., Castelluci, D., Dubrovskii, V. G., Trassoudaine, A., Goktas, N. I., Lapierre, R. R. & André, Y., 14 Jan 2021, In: CrystEngComm. 23, 2, p. 378-384 7 p.

    Research output: Contribution to journal › Article › peer-review

  8. Kinetic broadening of size distribution in terms of natural versus invariant variables

    Dubrovskii, V. G., Sibirev, N. V. & Sokolovskii, A. S., 13 Jan 2021, In: Physical Review E. 103, 1, 12 p., 012112.

    Research output: Contribution to journal › Article › peer-review

  9. Thermodynamics of the vapor–liquid–solid growth of ternary III–V nanowires in the presence of silicon

    Hijazi, H., Zeghouane, M. & Dubrovskii, V. G., Jan 2021, In: Nanomaterials. 11, 1, p. 1-8 8 p., 83.

    Research output: Contribution to journal › Article › peer-review

  10. Зависимость скорости роста и структуры III-V нитевидных нанокристаллов от площади сбора адатомов на поверхности подложки

    Дубровский, В. Г., 2021, In: ПИСЬМА В "ЖУРНАЛ ТЕХНИЧЕСКОЙ ФИЗИКИ". 47, 9, p. 37-40

    Research output: Contribution to journal › Article › peer-review

  11. Изменение формы наноостровка при селективной эпитаксии

    Дубровский, В. Г., 2021, In: ПИСЬМА В "ЖУРНАЛ ТЕХНИЧЕСКОЙ ФИЗИКИ". 47, 14, p. 43-46

    Research output: Contribution to journal › Article › peer-review

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