Research output

  1. Designing the orientation of GaN nanowires on Si(100) through pore geometry engineering

    Research output: Contribution to journal › Article › peer-review

  2. Formation of Hexagonal Pedestals in Si-doped GaN Layers Grown on AlN/Si(111) Templates

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  3. Topographically-Guided van der Waals Epitaxy: Selective Growth of AlN Nanowalls on h-BN Step Edges

    Research output: Contribution to journal › Article › peer-review

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Projects

  1. Участие в международной конференции "33rd International Conference on Advanced Laser Technologies (ALT’26)"

    Project: Grant fulfilment › Total grant fulfilment

  2. Управление составом в нанoструктурах тройных полупроводниковых соединений III-V: 2026 г. этап 1

    Project: Grant fulfilment › Grant stage fulfilment

  3. Наноструктуры полупроводниковых соединений III-V с управляемой морфологией и расширенной областью состава для оптоэлектроники: 2026 г., этап 2

    Project: Grant fulfilment › Grant stage fulfilment

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Activities

  1. Epitaxial growth of GaN pedestals on Si with an AlN buffer layer

    Activity: Conference talk types › Oral presentation

  2. Vapor-solid-solid growth of GaN nanowires in metastable phase

    Activity: Conference talk types › Oral presentation

  3. Van der Waals Epitaxial Growth of AlN Nanowires on h-BN

    Activity: Conference talk types › poster

View all (7) »

ID: 108143992