TY - GEN

T1 - MBE growth and properties of III-V hybrid nanostrucres on silicon for quantum applications

AU - Резник, Родион Романович

AU - Котляр, Константин Павлович

AU - Хребтов, Артем Игоревич

AU - Илькив, Игорь Владимирович

AU - Гридчин, Владислав Олегович

AU - Radhakrishnan, R

AU - Akopian, Nika

AU - Barettin, Daniele

AU - Цырлин, Георгий Эрнстович

N1 - Conference code: 21

PY - 2024/7/1

Y1 - 2024/7/1

N2 - InGaAs quantum dots in AlGaAs nanowires were formed using molecular-beam epitaxy on the silicon surface for the first time. The dependence of the synthesized nanostructures physical properties on growth conditions was studied. The results of optical properties studies showed that photoluminescence spectra from InGaAs quantum dots are observed at room temperature in a wide range of wavelengths from 850 to 1300 nm. Based on experimental data, modeling of the optical properties of the synthesized nanostructures was carried out.

AB - InGaAs quantum dots in AlGaAs nanowires were formed using molecular-beam epitaxy on the silicon surface for the first time. The dependence of the synthesized nanostructures physical properties on growth conditions was studied. The results of optical properties studies showed that photoluminescence spectra from InGaAs quantum dots are observed at room temperature in a wide range of wavelengths from 850 to 1300 nm. Based on experimental data, modeling of the optical properties of the synthesized nanostructures was carried out.

KW - molecular-beam epitaxy

KW - nanowires

KW - quantum dots

KW - semiconductors

KW - silicon

UR - https://www.mendeley.com/catalogue/6ebe88e2-74e1-369c-8e9e-5358cc5c508a/

U2 - 10.1109/ICLO59702.2024.10624319

DO - 10.1109/ICLO59702.2024.10624319

M3 - Conference contribution

SN - 9798350390674

T3 - International Conference Laser Optics (ICLO)

SP - 348

EP - 348

BT - 2024 International Conference Laser Optics, ICLO 2024 - Proceedings

T2 - 21st International Conference Laser Optics

Y2 - 1 July 2024 through 5 July 2024

ER -