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MBE growth and properties of III-V hybrid nanostrucres on silicon for quantum applications. / Резник, Родион Романович; Котляр, Константин Павлович; Хребтов, Артем Игоревич; Илькив, Игорь Владимирович; Гридчин, Владислав Олегович; Radhakrishnan, R; Akopian, Nika; Barettin, Daniele; Цырлин, Георгий Эрнстович.
2024 International Conference Laser Optics, ICLO 2024 - Proceedings. 2024. p. 348-348 (International Conference Laser Optics (ICLO)).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Harvard
Резник, РР, Котляр, КП, Хребтов, АИ, Илькив, ИВ, Гридчин, ВО, Radhakrishnan, R, Akopian, N, Barettin, D
& Цырлин, ГЭ 2024,
MBE growth and properties of III-V hybrid nanostrucres on silicon for quantum applications. in
2024 International Conference Laser Optics, ICLO 2024 - Proceedings. International Conference Laser Optics (ICLO), pp. 348-348, 21st International Conference Laser Optics, Санкт-Петербург, Russian Federation,
1/07/24.
https://doi.org/10.1109/ICLO59702.2024.10624319
APA
Резник, Р. Р., Котляр, К. П., Хребтов, А. И., Илькив, И. В., Гридчин, В. О., Radhakrishnan, R., Akopian, N., Barettin, D.
, & Цырлин, Г. Э. (2024).
MBE growth and properties of III-V hybrid nanostrucres on silicon for quantum applications. In
2024 International Conference Laser Optics, ICLO 2024 - Proceedings (pp. 348-348). (International Conference Laser Optics (ICLO)).
https://doi.org/10.1109/ICLO59702.2024.10624319
Vancouver
Author
Резник, Родион Романович ; Котляр, Константин Павлович ; Хребтов, Артем Игоревич ; Илькив, Игорь Владимирович ; Гридчин, Владислав Олегович ; Radhakrishnan, R ; Akopian, Nika ; Barettin, Daniele
; Цырлин, Георгий Эрнстович. /
MBE growth and properties of III-V hybrid nanostrucres on silicon for quantum applications. 2024 International Conference Laser Optics, ICLO 2024 - Proceedings. 2024. pp. 348-348 (International Conference Laser Optics (ICLO)).
BibTeX
@inproceedings{81e9de560f1c4b9fa405928fd226eb84,
title = "MBE growth and properties of III-V hybrid nanostrucres on silicon for quantum applications",
abstract = "InGaAs quantum dots in AlGaAs nanowires were formed using molecular-beam epitaxy on the silicon surface for the first time. The dependence of the synthesized nanostructures physical properties on growth conditions was studied. The results of optical properties studies showed that photoluminescence spectra from InGaAs quantum dots are observed at room temperature in a wide range of wavelengths from 850 to 1300 nm. Based on experimental data, modeling of the optical properties of the synthesized nanostructures was carried out.",
keywords = "molecular-beam epitaxy, nanowires, quantum dots, semiconductors, silicon",
author = "Резник, {Родион Романович} and Котляр, {Константин Павлович} and Хребтов, {Артем Игоревич} and Илькив, {Игорь Владимирович} and Гридчин, {Владислав Олегович} and R Radhakrishnan and Nika Akopian and Daniele Barettin and Цырлин, {Георгий Эрнстович}",
note = "R. R. Reznik et al., {"}MBE growth and properties of III-V hybrid nanostrucres on silicon for quantum applications,{"} 2024 International Conference Laser Optics (ICLO), Saint Petersburg, Russian Federation, 2024, pp. 348-348, doi: 10.1109/ICLO59702.2024.10624319.; 21st International Conference Laser Optics, ICLO 2024 ; Conference date: 01-07-2024 Through 05-07-2024",
year = "2024",
month = jul,
day = "1",
doi = "10.1109/ICLO59702.2024.10624319",
language = "English",
isbn = "9798350390674",
series = "International Conference Laser Optics (ICLO)",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "348--348",
booktitle = "2024 International Conference Laser Optics, ICLO 2024 - Proceedings",
url = "https://laseroptics.org/, https://laseroptics.org",
}
RIS
TY - GEN
T1 - MBE growth and properties of III-V hybrid nanostrucres on silicon for quantum applications
AU - Резник, Родион Романович
AU - Котляр, Константин Павлович
AU - Хребтов, Артем Игоревич
AU - Илькив, Игорь Владимирович
AU - Гридчин, Владислав Олегович
AU - Radhakrishnan, R
AU - Akopian, Nika
AU - Barettin, Daniele
AU - Цырлин, Георгий Эрнстович
N1 - Conference code: 21
PY - 2024/7/1
Y1 - 2024/7/1
N2 - InGaAs quantum dots in AlGaAs nanowires were formed using molecular-beam epitaxy on the silicon surface for the first time. The dependence of the synthesized nanostructures physical properties on growth conditions was studied. The results of optical properties studies showed that photoluminescence spectra from InGaAs quantum dots are observed at room temperature in a wide range of wavelengths from 850 to 1300 nm. Based on experimental data, modeling of the optical properties of the synthesized nanostructures was carried out.
AB - InGaAs quantum dots in AlGaAs nanowires were formed using molecular-beam epitaxy on the silicon surface for the first time. The dependence of the synthesized nanostructures physical properties on growth conditions was studied. The results of optical properties studies showed that photoluminescence spectra from InGaAs quantum dots are observed at room temperature in a wide range of wavelengths from 850 to 1300 nm. Based on experimental data, modeling of the optical properties of the synthesized nanostructures was carried out.
KW - molecular-beam epitaxy
KW - nanowires
KW - quantum dots
KW - semiconductors
KW - silicon
UR - https://www.mendeley.com/catalogue/6ebe88e2-74e1-369c-8e9e-5358cc5c508a/
U2 - 10.1109/ICLO59702.2024.10624319
DO - 10.1109/ICLO59702.2024.10624319
M3 - Conference contribution
SN - 9798350390674
T3 - International Conference Laser Optics (ICLO)
SP - 348
EP - 348
BT - 2024 International Conference Laser Optics, ICLO 2024 - Proceedings
T2 - 21st International Conference Laser Optics
Y2 - 1 July 2024 through 5 July 2024
ER -
