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III-V nanowires with quantum dots : MBE growth and properties. / Reznik, R. R.; Kotlyar, K. P.; Gridchin, V. O.; Ilkiv, I. V.; Khrebtov, A. I.; Samsonenko, Yu B.; Soshnikov, I. P.; Kryzhanovskaya, N. V.; Leandro, Lorenzo; Akopian, N.; Cirlin, G. E.

в: Journal of Physics: Conference Series, Том 2015, № 1, 012124, 17.11.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Reznik, RR, Kotlyar, KP, Gridchin, VO, Ilkiv, IV, Khrebtov, AI, Samsonenko, YB, Soshnikov, IP, Kryzhanovskaya, NV, Leandro, L, Akopian, N & Cirlin, GE 2021, 'III-V nanowires with quantum dots: MBE growth and properties', Journal of Physics: Conference Series, Том. 2015, № 1, 012124. https://doi.org/10.1088/1742-6596/2015/1/012124

APA

Reznik, R. R., Kotlyar, K. P., Gridchin, V. O., Ilkiv, I. V., Khrebtov, A. I., Samsonenko, Y. B., Soshnikov, I. P., Kryzhanovskaya, N. V., Leandro, L., Akopian, N., & Cirlin, G. E. (2021). III-V nanowires with quantum dots: MBE growth and properties. Journal of Physics: Conference Series, 2015(1), [012124]. https://doi.org/10.1088/1742-6596/2015/1/012124

Vancouver

Reznik RR, Kotlyar KP, Gridchin VO, Ilkiv IV, Khrebtov AI, Samsonenko YB и пр. III-V nanowires with quantum dots: MBE growth and properties. Journal of Physics: Conference Series. 2021 Нояб. 17;2015(1). 012124. https://doi.org/10.1088/1742-6596/2015/1/012124

Author

Reznik, R. R. ; Kotlyar, K. P. ; Gridchin, V. O. ; Ilkiv, I. V. ; Khrebtov, A. I. ; Samsonenko, Yu B. ; Soshnikov, I. P. ; Kryzhanovskaya, N. V. ; Leandro, Lorenzo ; Akopian, N. ; Cirlin, G. E. / III-V nanowires with quantum dots : MBE growth and properties. в: Journal of Physics: Conference Series. 2021 ; Том 2015, № 1.

BibTeX

@article{4a1c5ea60937461da389520107d8a128,
title = "III-V nanowires with quantum dots: MBE growth and properties",
abstract = "We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.",
author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Gridchin, {V. O.} and Ilkiv, {I. V.} and Khrebtov, {A. I.} and Samsonenko, {Yu B.} and Soshnikov, {I. P.} and Kryzhanovskaya, {N. V.} and Lorenzo Leandro and N. Akopian and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 2021 Institute of Physics Publishing. All rights reserved.; 6th International Conference on Metamaterials and Nanophotonics, METANANO 2021 ; Conference date: 13-09-2021 Through 17-09-2021",
year = "2021",
month = nov,
day = "17",
doi = "10.1088/1742-6596/2015/1/012124",
language = "English",
volume = "2015",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - III-V nanowires with quantum dots

T2 - 6th International Conference on Metamaterials and Nanophotonics, METANANO 2021

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Gridchin, V. O.

AU - Ilkiv, I. V.

AU - Khrebtov, A. I.

AU - Samsonenko, Yu B.

AU - Soshnikov, I. P.

AU - Kryzhanovskaya, N. V.

AU - Leandro, Lorenzo

AU - Akopian, N.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © 2021 Institute of Physics Publishing. All rights reserved.

PY - 2021/11/17

Y1 - 2021/11/17

N2 - We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.

AB - We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=85120919445&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/2015/1/012124

DO - 10.1088/1742-6596/2015/1/012124

M3 - Conference article

AN - SCOPUS:85120919445

VL - 2015

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012124

Y2 - 13 September 2021 through 17 September 2021

ER -

ID: 97043962