Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.
Язык оригинала | английский |
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Номер статьи | 012124 |
Журнал | Journal of Physics: Conference Series |
Том | 2015 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - 17 ноя 2021 |
Событие | 6th International Conference on Metamaterials and Nanophotonics, METANANO 2021 - Tbilisi, Virtual, Грузия Продолжительность: 13 сен 2021 → 17 сен 2021 |
ID: 97043962