InGaAs quantum dots in AlGaAs nanowires were formed using molecular-beam epitaxy on the silicon surface for the first time. The dependence of the synthesized nanostructures physical properties on growth conditions was studied. The results of optical properties studies showed that photoluminescence spectra from InGaAs quantum dots are observed at room temperature in a wide range of wavelengths from 850 to 1300 nm. Based on experimental data, modeling of the optical properties of the synthesized nanostructures was carried out.
Original languageEnglish
Title of host publication2024 International Conference Laser Optics, ICLO 2024 - Proceedings
Pages348-348
DOIs
StatePublished - 1 Jul 2024
Event21st International Conference Laser Optics - Санкт-Петербург, Russian Federation
Duration: 1 Jul 20245 Jul 2024
Conference number: 21
https://laseroptics.org/
https://laseroptics.org

Publication series

NameInternational Conference Laser Optics (ICLO)
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISSN (Print)2642-5580

Conference

Conference21st International Conference Laser Optics
Abbreviated titleICLO 2024
Country/TerritoryRussian Federation
CityСанкт-Петербург
Period1/07/245/07/24
Internet address

    Research areas

  • molecular-beam epitaxy, nanowires, quantum dots, semiconductors, silicon

ID: 124072511