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  1. 2004

  2. The Electroluminescence of SiO2 Layers with Excess Silicon

    Baraban, A. P., Egorov, D. V., Petrov, Y. V. & Miloglyadova, L. V., 1 Jan 2004, In: Technical Physics Letters. 30, 1, p. 40-41 2 p.

    Research output: Contribution to journal › Review article › peer-review

  3. 2003

  4. Near Ultraviolet Diagnostics of Oxide Layers in Si - SiO2 Structures

    Askinazi, A. Y., Baraban, A. P. & Miloglyadova, L. V., 1 Sep 2003, In: Technical Physics Letters. 29, 9, p. 725-727 3 p.

    Research output: Contribution to journal › Article › peer-review

  5. Onefold coordinated oxygen atom: An electron trap in the silicon oxide

    Gritsenko, V. A., Shaposhnikov, A. V., Novikov, Y. N., Baraban, A. P., Wong, H., Zhidomirov, G. M. & Roger, M., 1 Apr 2003, In: Microelectronics Reliability. 43, 4, p. 665-669 5 p.

    Research output: Contribution to journal › Article › peer-review

  6. 2002

  7. Electroluminescence of Si-SiO2-Si3N4 structures

    Baraban, A. P., Egorov, D. V., Askinazi, A. Y. & Miloglyadova, L. V., 1 Dec 2002, In: Technical Physics Letters. 28, 12, p. 978-980 3 p.

    Research output: Contribution to journal › Article › peer-review

  8. The energy position of electrically active centers in the oxide layer of SIMOX structures

    Askinazi, A. Y., Baraban, A. P., Dmitriev, V. A. & Miloglyadova, L. V., 1 Dec 2002, In: Technical Physics Letters. 28, 12, p. 983-985 3 p.

    Research output: Contribution to journal › Article › peer-review

  9. Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures

    Baraban, A. P. & Miloglyadova, L. V., 1 May 2002, In: Technical Physics. 47, 5, p. 569-573 5 p.

    Research output: Contribution to journal › Article › peer-review

  10. Role of masking oxide on the silicon surface on defect formation in SIMOX structures

    Askinazi, A. Y., Baraban, A. P. & Miloglyadova, L. V., 1 May 2002, In: Technical Physics. 47, 5, p. 574-577 4 p.

    Research output: Contribution to journal › Article › peer-review

  11. Numerical study of one-fold coordinated oxygen atom in silicon gate oxide

    Gritsenko, V. A., Shaposhnikov, A., Novikov, Y. N., Baraban, A. P., Wong, H., Zhidomirov, G. M. & Roger, M., 1 Jan 2002, Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002. Institute of Electrical and Electronics Engineers Inc., p. 39-42 4 p. 1029152. (Proceedings of the IEEE Hong Kong Electron Devices Meeting; vol. 2002-January).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  12. 2001

  13. The oxide layer charging in SIMOX structures

    Askinazi, A. Y., Baraban, A. P., Dmitriev, V. A. & Miloglyadova, L. V., 1 May 2001, In: Technical Physics Letters. 27, 5, p. 422-423 2 p.

    Research output: Contribution to journal › Article › peer-review

  14. Electric field affects the charge state in ion-implanted Si-SiO2 structures

    Baraban, A. P., Miloglyadova, L. V. & Ter-Nersesyants, V. I., 1 Feb 2001, In: Technical Physics Letters. 27, 2, p. 129-131 3 p.

    Research output: Contribution to journal › Article › peer-review

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