Research output: Contribution to journal › Article › peer-review
Silicon-on-insulator (Si-SiO2) structures fabricated using the SIMOX technology were studied by measuring high-frequency capacitance-voltage characteristics. Based on these data, the energy position of electrically active centers in the oxide layer of SIMOX structures is estimated.
| Original language | English |
|---|---|
| Pages (from-to) | 983-985 |
| Number of pages | 3 |
| Journal | Technical Physics Letters |
| Volume | 28 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1 Dec 2002 |
ID: 41086206