Research output: Contribution to journal › Article › peer-review
We have studied the effect of annealing on the electroluminescence (EL) spectrum of Si-SiO2 structures containing excess ion-implanted silicon in the oxide layer. The implantation of 150-keV silicon ions to doses in the range from 5 × 1016 to 3 × 1017 cm -2 leads to the appearance of an intense emission band at 2.7 eV in the EL spectrum. The postimplantation annealing leads to a decrease in the intensity of this band and to the appearance of a new EL band at 1.6 eV assigned to radiative transitions in defect centers formed at the boundaries between silicon nanoclusters and silicon dioxide.
Original language | English |
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Pages (from-to) | 85-87 |
Number of pages | 3 |
Journal | Technical Physics Letters |
Volume | 30 |
Issue number | 2 |
DOIs | |
State | Published - 1 Feb 2004 |
ID: 35937785