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  1. 1991

  2. Energy dissipation of heated electrons in silicon dioxide layers

    Baraban, A. P., Bulavinov, V. V. & Rybakov, M. O., 1 Jan 1991, In: Soviet Physics Journal. 34, 1, p. 27-30 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. 1979

  4. EFFECT OF FLUORIDE IONS ON THE PROPERTIES OF AN SI-SiO2 STRUCTURE.

    Tarantov, Y. A., Baraban, A. P. & Konorov, P. P., 1 Jan 1979, In: Soviet Microelectronics (English Translation of Mikroelektronika). 8, 2, p. 136-137 2 p.

    Research output: Contribution to journal › Article › peer-review

  5. FEATURES OF THE RELAXATION OF THE NONEQUILIBRIUM CAPACITANCE OF Si-SiO2 STRUCTURES IN INTENSE ELECTRIC FIELDS.

    Baraban, A. P. & Tarantov, Y. A., 1 Jan 1979, In: Soviet Microelectronics (English Translation of Mikroelektronika). 8, 4, p. 285-286 2 p.

    Research output: Contribution to journal › Article › peer-review

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