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  1. 1979

  2. FEATURES OF THE RELAXATION OF THE NONEQUILIBRIUM CAPACITANCE OF Si-SiO2 STRUCTURES IN INTENSE ELECTRIC FIELDS.

    Baraban, A. P. & Tarantov, Y. A., 1 Jan 1979, In: Soviet Microelectronics (English Translation of Mikroelektronika). 8, 4, p. 285-286 2 p.

    Research output: Contribution to journal › Article › peer-review

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ID: 147658