Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
The fundamental possibility of MBE III-V nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting systems have been studied and compared with properties of such nanowires on silicon substrates.
| Original language | English |
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| Title of host publication | Proceedings - International Conference Laser Optics 2018, ICLO 2018 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 382 |
| Number of pages | 1 |
| ISBN (Print) | 9781538636121 |
| DOIs | |
| State | Published - 13 Aug 2018 |
| Event | 2018 International Conference Laser Optics, ICLO 2018 - St. Petersburg, Russian Federation Duration: 4 Jun 2018 → 8 Jun 2018 |
| Name | Proceedings - International Conference Laser Optics 2018, ICLO 2018 |
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| Conference | 2018 International Conference Laser Optics, ICLO 2018 |
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| Country/Territory | Russian Federation |
| City | St. Petersburg |
| Period | 4/06/18 → 8/06/18 |
ID: 98508035