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  1. 2020

  2. Multiply GaAs quantum dots in AlGaAs nanowires: MBE growth and properties

    Reznik, R. R., Kotlyar, K. P., Khrebtov, A. I., Samsonenko, Y. B., Shtrom, I. V. & Cirlin, G. E., 28 Dec 2020, In: Journal of Physics: Conference Series. 1695, 1, 012205.

    Research output: Contribution to journal › Conference article › peer-review

  3. Wet chemical etching of GaN or InGaN nanowires on Si substrate for micro and nano-devises fabrication

    Lendyashova, V. V., Kotlyar, K. P., Reznik, R. R., Berezovskaya, T. N., Nikitina, E. V., Soshnikov, I. P. & Cirlin, G. E., 28 Dec 2020, In: Journal of Physics: Conference Series. 1695, 1, 012047.

    Research output: Contribution to journal › Conference article › peer-review

  4. Selective-Area Growth of GaN Nanowires on Patterned SiO x/Si Substrates by Molecular Beam Epitaxy

    Gridchin, V. O., Kotlyar, K. P., Reznik, R. R., Dvoretskaya, L. N., Parfen’eva, A. V., Mukhin, I. S. & Cirlin, G. E., Nov 2020, In: Technical Physics Letters. 46, 11, p. 1080-1083 4 p.

    Research output: Contribution to journal › Article › peer-review

  5. Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties

    Reznik, R. R., Gridchin, V. O., Kotlyar, K. P., Kryzhanovskaya, N. V., Morozov, S. V. & Cirlin, G. E., 1 Sep 2020, In: Semiconductors. 54, 9, p. 1075-1077 3 p.

    Research output: Contribution to journal › Article › peer-review

  6. MBE synthesis and properties of GaN NWs on SiC/Si substrate and InGaN nanostructures on Si substrate

    Reznik, R. R., Kotlyar, K. P., Khrebtov, A. I., Kukushkin, S. A., Kryzhanovskaya, N. V. & Cirlin, G. E., 22 Jun 2020, In: Journal of Physics: Conference Series. 1537, 1, 012003.

    Research output: Contribution to journal › Conference article › peer-review

  7. Peculiarities of the structural properties of InxGa1-xN polytype nanostructures grown by molecular-beam epitaxy

    Gridchin, V. O., Kotlyar, K. P., Reznik, R. R., Shevchuk, D. S., Kirilenko, D. A., Bert, N. A., Soshnikov, I. P. & Cirlin, G. E., 25 Mar 2020, In: Journal of Physics: Conference Series. 1482, 1, 012014.

    Research output: Contribution to journal › Conference article › peer-review

  8. 2019

  9. InGaN nanostructures of a branched morphology on silicon substrate: MBE synthesis and properties

    Reznik, R. R., Kotlyar, K. P., Khrebtov, A. I., Kryzhanovskaya, N. V. & Cirlin, G. E., 20 Dec 2019, In: Journal of Physics: Conference Series. 1410, 1, 012052.

    Research output: Contribution to journal › Conference article › peer-review

  10. Photovoltaic properties of InP NWs/p-Si heterostructure

    Kotlyar, K. P., Vershinin, A. V., Reznik, R. R., Pavlov, S. I., Kudryashov, D. A., Zelentsov, K. S., Mozharov, A. M., Karaborchev, A. A., Mukhin, I. S., Soshnikov, I. P. & Cirlin, G. E., 20 Dec 2019, In: Journal of Physics: Conference Series. 1410, 1, 012060.

    Research output: Contribution to journal › Conference article › peer-review

  11. Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate

    Reznik, R. R., Kotlyar, K. P., Kryzhanovskaya, N. V., Morozov, S. V. & Cirlin, G. E., 1 Nov 2019, In: Technical Physics Letters. 45, 11, p. 1111-1113 3 p.

    Research output: Contribution to journal › Article › peer-review

  12. Optical properties of AlxGa1-xAs nanowires with different composition in Al

    Shtrom, I. V., Kryzhkov, D. I., Reznik, R. R., Ubyivovk, E. V., Kotlyar, K. P., Samsonenko, Y. B., Khrebtov, A. I., Agekyan, V. F. & Cirlin, G. E., 15 Jan 2019, State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018. Petrov, Y. & Vyvenko, O. (eds.). American Institute of Physics, 5 p. 040005. (AIP Conference Proceedings; vol. 2064, no. 1).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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