A possibility of the AlGaAs nanowires with multiply GaAs QDs MBE growth on silicon substrates has been demonstrated. The morphological on optical properties of grown structures were studied.

Original languageEnglish
Article number012205
JournalJournal of Physics: Conference Series
Volume1695
Issue number1
DOIs
StatePublished - 28 Dec 2020
Event7th International School and Conference "SaintPetersburg OPEN 2020" on Optoelectronics, Photonics, Engineering and Nanostructures - Saint Petersburg, Russian Federation
Duration: 27 Apr 202030 Apr 2020

    Scopus subject areas

  • Physics and Astronomy(all)

ID: 97045774