Research output: Contribution to journal › Conference article › peer-review
A possibility of InGaN nanostructures of a branched morphology MBE growth on Si substrate has been demonstrated. The results of morphological studies have shown that InGaN synthesis occurs in several stages. InGaN nanostructures turned out to be optically active at room temperature and have a wide radiation visible range.
| Original language | English |
|---|---|
| Article number | 012052 |
| Journal | Journal of Physics: Conference Series |
| Volume | 1410 |
| Issue number | 1 |
| DOIs | |
| State | Published - 20 Dec 2019 |
| Event | 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Russian Federation Duration: 22 Apr 2019 → 25 Apr 2019 |
ID: 98505914