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Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate. / Bondarenko, D.N. ; Gridchin, V.O. ; Kotlyar, K.P. ; Reznik, R.R. ; Kirilenko, D.A. ; aranov, A.I. B; Dragunova, A.S. ; Kryzhanovskaya, N.V. ; Maksimova, A.A. ; Cirlin, G.E. .
в:
St. Petersburg State Polytechnical University Journal: Physics and Mathematics, Том 16, № 1.2, 2023, стр. 179-184.
Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции
Harvard
Bondarenko, DN
, Gridchin, VO, Kotlyar, KP, Reznik, RR, Kirilenko, DA, aranov, AIB, Dragunova, AS, Kryzhanovskaya, NV, Maksimova, AA
& Cirlin, GE 2023, '
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate',
St. Petersburg State Polytechnical University Journal: Physics and Mathematics, Том. 16, № 1.2, стр. 179-184.
https://doi.org/10.18721/JPM.161.227APA
Bondarenko, D. N.
, Gridchin, V. O., Kotlyar, K. P., Reznik, R. R., Kirilenko, D. A., aranov, A. I. B., Dragunova, A. S., Kryzhanovskaya, N. V., Maksimova, A. A.
, & Cirlin, G. E. (2023).
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate.
St. Petersburg State Polytechnical University Journal: Physics and Mathematics,
16(1.2), 179-184.
https://doi.org/10.18721/JPM.161.227Vancouver
Author
Bondarenko, D.N.
; Gridchin, V.O. ; Kotlyar, K.P. ; Reznik, R.R. ; Kirilenko, D.A. ; aranov, A.I. B ; Dragunova, A.S. ; Kryzhanovskaya, N.V. ; Maksimova, A.A.
; Cirlin, G.E. . /
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate. в:
St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 2023 ; Том 16, № 1.2. стр. 179-184.
BibTeX
@article{243e34363518421ead861512d29737ba,
title = "Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate",
abstract = "An approach to the fabrication of LED structure based on GaN nanowireswith thick core-shell InGaN insertions with high indium content is studied. The results of optical measurements demonstrate the photoluminescence from the InGaN insertions in the green spectrum at room temperature. The study of electrical properties shows typical diode dependence. The results can be crucial for the development of light-emitting diodes on Si substrates.",
keywords = "GaN/InGaN nanowires, micro light-emitting diodes, plasma-assisted molecular beam epitaxy, thick core-shell InGaN insertions, GaN/InGaN nanowires, micro light-emitting diodes, plasma-assisted molecular beam epitaxy, thick core-shell InGaN insertions",
author = "D.N. Bondarenko and V.O. Gridchin and K.P. Kotlyar and R.R. Reznik and D.A. Kirilenko and aranov, {A.I. B} and A.S. Dragunova and N.V. Kryzhanovskaya and A.A. Maksimova and G.E. Cirlin",
note = "Bondarenko D.N., Gridchin V.O., Kotlyar K.P., Reznik R.R., Kirilenko D.A., Baranov A.I., Dragunova A.S., Kryzhanovskaya N.V., Maksimova A.A., Cirlin G.E., Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate, St. Petersburg State Polytechnical University Journal. Physics and Mathematics. 16 (1.2) (2023) 179–184. DOI: https://doi.org/10.18721/JPM.161.227; null ; Conference date: 17-10-2022 Through 21-10-2022",
year = "2023",
doi = "10.18721/JPM.161.227",
language = "English",
volume = "16",
pages = "179--184",
journal = "НАУЧНО-ТЕХНИЧЕСКИЕ ВЕДОМОСТИ САНКТ-ПЕТЕРБУРГСКОГО ГОСУДАРСТВЕННОГО ПОЛИТЕХНИЧЕСКОГО УНИВЕРСИТЕТА. ФИЗИКО-МАТЕМАТИЧЕСКИЕ НАУКИ",
issn = "2304-9782",
publisher = "Издательство Санкт-Петербургского Государственного Политехнического Университета",
number = "1.2",
url = "http://physica.spb.ru/",
}
RIS
TY - JOUR
T1 - Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
AU - Bondarenko, D.N.
AU - Gridchin, V.O.
AU - Kotlyar, K.P.
AU - Reznik, R.R.
AU - Kirilenko, D.A.
AU - aranov, A.I. B
AU - Dragunova, A.S.
AU - Kryzhanovskaya, N.V.
AU - Maksimova, A.A.
AU - Cirlin, G.E.
N1 - Bondarenko D.N., Gridchin V.O., Kotlyar K.P., Reznik R.R., Kirilenko D.A.,
Baranov A.I., Dragunova A.S., Kryzhanovskaya N.V., Maksimova A.A., Cirlin G.E., Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate, St. Petersburg State Polytechnical University Journal. Physics and Mathematics. 16 (1.2) (2023) 179–184. DOI: https://doi.org/10.18721/JPM.161.227
PY - 2023
Y1 - 2023
N2 - An approach to the fabrication of LED structure based on GaN nanowireswith thick core-shell InGaN insertions with high indium content is studied. The results of optical measurements demonstrate the photoluminescence from the InGaN insertions in the green spectrum at room temperature. The study of electrical properties shows typical diode dependence. The results can be crucial for the development of light-emitting diodes on Si substrates.
AB - An approach to the fabrication of LED structure based on GaN nanowireswith thick core-shell InGaN insertions with high indium content is studied. The results of optical measurements demonstrate the photoluminescence from the InGaN insertions in the green spectrum at room temperature. The study of electrical properties shows typical diode dependence. The results can be crucial for the development of light-emitting diodes on Si substrates.
KW - GaN/InGaN nanowires
KW - micro light-emitting diodes
KW - plasma-assisted molecular beam epitaxy
KW - thick core-shell InGaN insertions
KW - GaN/InGaN nanowires
KW - micro light-emitting diodes
KW - plasma-assisted molecular beam epitaxy
KW - thick core-shell InGaN insertions
U2 - 10.18721/JPM.161.227
DO - 10.18721/JPM.161.227
M3 - Conference article
VL - 16
SP - 179
EP - 184
JO - НАУЧНО-ТЕХНИЧЕСКИЕ ВЕДОМОСТИ САНКТ-ПЕТЕРБУРГСКОГО ГОСУДАРСТВЕННОГО ПОЛИТЕХНИЧЕСКОГО УНИВЕРСИТЕТА. ФИЗИКО-МАТЕМАТИЧЕСКИЕ НАУКИ
JF - НАУЧНО-ТЕХНИЧЕСКИЕ ВЕДОМОСТИ САНКТ-ПЕТЕРБУРГСКОГО ГОСУДАРСТВЕННОГО ПОЛИТЕХНИЧЕСКОГО УНИВЕРСИТЕТА. ФИЗИКО-МАТЕМАТИЧЕСКИЕ НАУКИ
SN - 2304-9782
IS - 1.2
Y2 - 17 October 2022 through 21 October 2022
ER -
