Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

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Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate. / Bondarenko, D.N. ; Gridchin, V.O. ; Kotlyar, K.P. ; Reznik, R.R. ; Kirilenko, D.A. ; aranov, A.I. B; Dragunova, A.S. ; Kryzhanovskaya, N.V. ; Maksimova, A.A. ; Cirlin, G.E. .

In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics, Vol. 16, No. 1.2, 2023, p. 179-184.

Research output: Contribution to journal › Conference article

Author

Bondarenko, D.N. ; Gridchin, V.O. ; Kotlyar, K.P. ; Reznik, R.R. ; Kirilenko, D.A. ; aranov, A.I. B ; Dragunova, A.S. ; Kryzhanovskaya, N.V. ; Maksimova, A.A. ; Cirlin, G.E. . / Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate. In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 2023 ; Vol. 16, No. 1.2. pp. 179-184.

BibTeX

@article{243e34363518421ead861512d29737ba,

title = "Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate",

abstract = "An approach to the fabrication of LED structure based on GaN nanowireswith thick core-shell InGaN insertions with high indium content is studied. The results of optical measurements demonstrate the photoluminescence from the InGaN insertions in the green spectrum at room temperature. The study of electrical properties shows typical diode dependence. The results can be crucial for the development of light-emitting diodes on Si substrates.",

keywords = "GaN/InGaN nanowires, micro light-emitting diodes, plasma-assisted molecular beam epitaxy, thick core-shell InGaN insertions, GaN/InGaN nanowires, micro light-emitting diodes, plasma-assisted molecular beam epitaxy, thick core-shell InGaN insertions",

author = "D.N. Bondarenko and V.O. Gridchin and K.P. Kotlyar and R.R. Reznik and D.A. Kirilenko and aranov, {A.I. B} and A.S. Dragunova and N.V. Kryzhanovskaya and A.A. Maksimova and G.E. Cirlin",

note = "Bondarenko D.N., Gridchin V.O., Kotlyar K.P., Reznik R.R., Kirilenko D.A., Baranov A.I., Dragunova A.S., Kryzhanovskaya N.V., Maksimova A.A., Cirlin G.E., Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate, St. Petersburg State Polytechnical University Journal. Physics and Mathematics. 16 (1.2) (2023) 179–184. DOI: https://doi.org/10.18721/JPM.161.227; null ; Conference date: 17-10-2022 Through 21-10-2022",

year = "2023",

doi = "10.18721/JPM.161.227",

language = "English",

volume = "16",

pages = "179--184",

journal = "НАУЧНО-ТЕХНИЧЕСКИЕ ВЕДОМОСТИ САНКТ-ПЕТЕРБУРГСКОГО ГОСУДАРСТВЕННОГО ПОЛИТЕХНИЧЕСКОГО УНИВЕРСИТЕТА. ФИЗИКО-МАТЕМАТИЧЕСКИЕ НАУКИ",

issn = "2304-9782",

publisher = "Издательство Санкт-Петербургского Государственного Политехнического Университета",

number = "1.2",

url = "http://physica.spb.ru/",

}

RIS

TY - JOUR

T1 - Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

AU - Bondarenko, D.N.

AU - Gridchin, V.O.

AU - Kotlyar, K.P.

AU - Reznik, R.R.

AU - Kirilenko, D.A.

AU - aranov, A.I. B

AU - Dragunova, A.S.

AU - Kryzhanovskaya, N.V.

AU - Maksimova, A.A.

AU - Cirlin, G.E.

N1 - Bondarenko D.N., Gridchin V.O., Kotlyar K.P., Reznik R.R., Kirilenko D.A., Baranov A.I., Dragunova A.S., Kryzhanovskaya N.V., Maksimova A.A., Cirlin G.E., Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate, St. Petersburg State Polytechnical University Journal. Physics and Mathematics. 16 (1.2) (2023) 179–184. DOI: https://doi.org/10.18721/JPM.161.227

PY - 2023

Y1 - 2023

N2 - An approach to the fabrication of LED structure based on GaN nanowireswith thick core-shell InGaN insertions with high indium content is studied. The results of optical measurements demonstrate the photoluminescence from the InGaN insertions in the green spectrum at room temperature. The study of electrical properties shows typical diode dependence. The results can be crucial for the development of light-emitting diodes on Si substrates.

AB - An approach to the fabrication of LED structure based on GaN nanowireswith thick core-shell InGaN insertions with high indium content is studied. The results of optical measurements demonstrate the photoluminescence from the InGaN insertions in the green spectrum at room temperature. The study of electrical properties shows typical diode dependence. The results can be crucial for the development of light-emitting diodes on Si substrates.

KW - GaN/InGaN nanowires

KW - micro light-emitting diodes

KW - plasma-assisted molecular beam epitaxy

KW - thick core-shell InGaN insertions

KW - GaN/InGaN nanowires

KW - micro light-emitting diodes

KW - plasma-assisted molecular beam epitaxy

KW - thick core-shell InGaN insertions

U2 - 10.18721/JPM.161.227

DO - 10.18721/JPM.161.227

M3 - Conference article

VL - 16

SP - 179

EP - 184

JO - НАУЧНО-ТЕХНИЧЕСКИЕ ВЕДОМОСТИ САНКТ-ПЕТЕРБУРГСКОГО ГОСУДАРСТВЕННОГО ПОЛИТЕХНИЧЕСКОГО УНИВЕРСИТЕТА. ФИЗИКО-МАТЕМАТИЧЕСКИЕ НАУКИ

JF - НАУЧНО-ТЕХНИЧЕСКИЕ ВЕДОМОСТИ САНКТ-ПЕТЕРБУРГСКОГО ГОСУДАРСТВЕННОГО ПОЛИТЕХНИЧЕСКОГО УНИВЕРСИТЕТА. ФИЗИКО-МАТЕМАТИЧЕСКИЕ НАУКИ

SN - 2304-9782

IS - 1.2

Y2 - 17 October 2022 through 21 October 2022

ER -

ID: 106358700