Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate. / Reznik, R. R.; Shtrom, I. V.; Soshnikov, I. P.; Kukushkin, S. A.; Zeze, D. A.; Cirlin, G. E.
в: Journal of Physics: Conference Series, Том 1038, № 1, 012063, 18.06.2018.Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
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TY - JOUR
T1 - MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate
AU - Reznik, R. R.
AU - Shtrom, I. V.
AU - Soshnikov, I. P.
AU - Kukushkin, S. A.
AU - Zeze, D. A.
AU - Cirlin, G. E.
N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.
PY - 2018/6/18
Y1 - 2018/6/18
N2 - The possibility of AlGaAs nanowires MBE growth on a silicon substrate with a nanometer silicon carbide buffer layer was demonstrated for the first time. Under the same experimental conditions (including the same composition), the diameter of the AlGaAs/SiC/Si nanowires are smaller than nanowires diameter grown on a silicon substrate. Based on the photoluminescence analysis suggests that when AlGaAs/SiC/Si NWs are grown, a physical complex structure appears due to the self-organized formation of regions with different molar fractions of aluminum in the solid solution.
AB - The possibility of AlGaAs nanowires MBE growth on a silicon substrate with a nanometer silicon carbide buffer layer was demonstrated for the first time. Under the same experimental conditions (including the same composition), the diameter of the AlGaAs/SiC/Si nanowires are smaller than nanowires diameter grown on a silicon substrate. Based on the photoluminescence analysis suggests that when AlGaAs/SiC/Si NWs are grown, a physical complex structure appears due to the self-organized formation of regions with different molar fractions of aluminum in the solid solution.
UR - http://www.scopus.com/inward/record.url?scp=85049522731&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1038/1/012063
DO - 10.1088/1742-6596/1038/1/012063
M3 - Conference article
AN - SCOPUS:85049522731
VL - 1038
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012063
T2 - International Conference PhysicA.SPb 2017
Y2 - 24 October 2017 through 26 October 2017
ER -
ID: 98508206