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MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate. / Reznik, R. R.; Shtrom, I. V.; Soshnikov, I. P.; Kukushkin, S. A.; Zeze, D. A.; Cirlin, G. E.

In: Journal of Physics: Conference Series, Vol. 1038, No. 1, 012063, 18.06.2018.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Reznik, RR, Shtrom, IV, Soshnikov, IP, Kukushkin, SA, Zeze, DA & Cirlin, GE 2018, 'MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate', Journal of Physics: Conference Series, vol. 1038, no. 1, 012063. https://doi.org/10.1088/1742-6596/1038/1/012063

APA

Reznik, R. R., Shtrom, I. V., Soshnikov, I. P., Kukushkin, S. A., Zeze, D. A., & Cirlin, G. E. (2018). MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate. Journal of Physics: Conference Series, 1038(1), [012063]. https://doi.org/10.1088/1742-6596/1038/1/012063

Vancouver

Reznik RR, Shtrom IV, Soshnikov IP, Kukushkin SA, Zeze DA, Cirlin GE. MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate. Journal of Physics: Conference Series. 2018 Jun 18;1038(1). 012063. https://doi.org/10.1088/1742-6596/1038/1/012063

Author

Reznik, R. R. ; Shtrom, I. V. ; Soshnikov, I. P. ; Kukushkin, S. A. ; Zeze, D. A. ; Cirlin, G. E. / MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate. In: Journal of Physics: Conference Series. 2018 ; Vol. 1038, No. 1.

BibTeX

@article{6bc15cecada64b8d8d079d34e1d0b26c,
title = "MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate",
abstract = "The possibility of AlGaAs nanowires MBE growth on a silicon substrate with a nanometer silicon carbide buffer layer was demonstrated for the first time. Under the same experimental conditions (including the same composition), the diameter of the AlGaAs/SiC/Si nanowires are smaller than nanowires diameter grown on a silicon substrate. Based on the photoluminescence analysis suggests that when AlGaAs/SiC/Si NWs are grown, a physical complex structure appears due to the self-organized formation of regions with different molar fractions of aluminum in the solid solution.",
author = "Reznik, {R. R.} and Shtrom, {I. V.} and Soshnikov, {I. P.} and Kukushkin, {S. A.} and Zeze, {D. A.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; International Conference PhysicA.SPb 2017 ; Conference date: 24-10-2017 Through 26-10-2017",
year = "2018",
month = jun,
day = "18",
doi = "10.1088/1742-6596/1038/1/012063",
language = "English",
volume = "1038",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate

AU - Reznik, R. R.

AU - Shtrom, I. V.

AU - Soshnikov, I. P.

AU - Kukushkin, S. A.

AU - Zeze, D. A.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2018/6/18

Y1 - 2018/6/18

N2 - The possibility of AlGaAs nanowires MBE growth on a silicon substrate with a nanometer silicon carbide buffer layer was demonstrated for the first time. Under the same experimental conditions (including the same composition), the diameter of the AlGaAs/SiC/Si nanowires are smaller than nanowires diameter grown on a silicon substrate. Based on the photoluminescence analysis suggests that when AlGaAs/SiC/Si NWs are grown, a physical complex structure appears due to the self-organized formation of regions with different molar fractions of aluminum in the solid solution.

AB - The possibility of AlGaAs nanowires MBE growth on a silicon substrate with a nanometer silicon carbide buffer layer was demonstrated for the first time. Under the same experimental conditions (including the same composition), the diameter of the AlGaAs/SiC/Si nanowires are smaller than nanowires diameter grown on a silicon substrate. Based on the photoluminescence analysis suggests that when AlGaAs/SiC/Si NWs are grown, a physical complex structure appears due to the self-organized formation of regions with different molar fractions of aluminum in the solid solution.

UR - http://www.scopus.com/inward/record.url?scp=85049522731&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1038/1/012063

DO - 10.1088/1742-6596/1038/1/012063

M3 - Conference article

AN - SCOPUS:85049522731

VL - 1038

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012063

T2 - International Conference PhysicA.SPb 2017

Y2 - 24 October 2017 through 26 October 2017

ER -

ID: 98508206