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Hexagonal Ge on the side facets of GaAs and AlGaAs nanowires. / Ilkiv, I. V.; Kotlyar, K. P.; Kirilenko, D. A.; Soshnikov, I. P.; Mikushev, S. V.; Dubrovskii, V. G.; Cirlin, George E.

2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., 2022. стр. 1-1.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Ilkiv, IV, Kotlyar, KP, Kirilenko, DA, Soshnikov, IP, Mikushev, SV, Dubrovskii, VG & Cirlin, GE 2022, Hexagonal Ge on the side facets of GaAs and AlGaAs nanowires. в 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., стр. 1-1, 2022 International Conference Laser Optics, ICLO 2022, St. Petersburg, Российская Федерация, 20/06/22. https://doi.org/10.1109/iclo54117.2022.9840142

APA

Ilkiv, I. V., Kotlyar, K. P., Kirilenko, D. A., Soshnikov, I. P., Mikushev, S. V., Dubrovskii, V. G., & Cirlin, G. E. (2022). Hexagonal Ge on the side facets of GaAs and AlGaAs nanowires. в 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss (стр. 1-1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/iclo54117.2022.9840142

Vancouver

Ilkiv IV, Kotlyar KP, Kirilenko DA, Soshnikov IP, Mikushev SV, Dubrovskii VG и пр. Hexagonal Ge on the side facets of GaAs and AlGaAs nanowires. в 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc. 2022. стр. 1-1 https://doi.org/10.1109/iclo54117.2022.9840142

Author

Ilkiv, I. V. ; Kotlyar, K. P. ; Kirilenko, D. A. ; Soshnikov, I. P. ; Mikushev, S. V. ; Dubrovskii, V. G. ; Cirlin, George E. / Hexagonal Ge on the side facets of GaAs and AlGaAs nanowires. 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., 2022. стр. 1-1

BibTeX

@inproceedings{85c284d5dd804d84a1e4b3a5371e160a,
title = "Hexagonal Ge on the side facets of GaAs and AlGaAs nanowires",
abstract = "Growth of hexagonal Ge stripes on the side facets of wurtzite AlGaAs and GaAs nanowires is considered. It is shown experimentally and explained within a model that Ge forms stripes on AlGaAs nanowires, while it covers conformally GaAs nanowires. The effect is explained by different surface and interface energies in the two material systems. ",
keywords = "GaAs and AlGaAs nanowires, hexagonal Ge, molecular beam epitaxy, surface energetics",
author = "Ilkiv, {I. V.} and Kotlyar, {K. P.} and Kirilenko, {D. A.} and Soshnikov, {I. P.} and Mikushev, {S. V.} and Dubrovskii, {V. G.} and Cirlin, {George E.}",
note = "I. V. Ilkiv et al., {"}Hexagonal Ge on the side facets of GaAs and AlGaAs nanowires,{"} 2022 International Conference Laser Optics (ICLO), 2022, pp. 1-1, doi: 10.1109/ICLO54117.2022.9840142.; 2022 International Conference Laser Optics, ICLO 2022 ; Conference date: 20-06-2022 Through 24-06-2022",
year = "2022",
month = jul,
doi = "10.1109/iclo54117.2022.9840142",
language = "English",
isbn = "9781665466646",
pages = "1--1",
booktitle = "2022 International Conference Laser Optics, ICLO 2022 - Proceedingss",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

RIS

TY - GEN

T1 - Hexagonal Ge on the side facets of GaAs and AlGaAs nanowires

AU - Ilkiv, I. V.

AU - Kotlyar, K. P.

AU - Kirilenko, D. A.

AU - Soshnikov, I. P.

AU - Mikushev, S. V.

AU - Dubrovskii, V. G.

AU - Cirlin, George E.

N1 - Conference code: 20

PY - 2022/7

Y1 - 2022/7

N2 - Growth of hexagonal Ge stripes on the side facets of wurtzite AlGaAs and GaAs nanowires is considered. It is shown experimentally and explained within a model that Ge forms stripes on AlGaAs nanowires, while it covers conformally GaAs nanowires. The effect is explained by different surface and interface energies in the two material systems.

AB - Growth of hexagonal Ge stripes on the side facets of wurtzite AlGaAs and GaAs nanowires is considered. It is shown experimentally and explained within a model that Ge forms stripes on AlGaAs nanowires, while it covers conformally GaAs nanowires. The effect is explained by different surface and interface energies in the two material systems.

KW - GaAs and AlGaAs nanowires

KW - hexagonal Ge

KW - molecular beam epitaxy

KW - surface energetics

UR - http://www.scopus.com/inward/record.url?scp=85136384551&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/8cd7c5d7-fd8f-333a-99a3-ae36ee8ef05e/

U2 - 10.1109/iclo54117.2022.9840142

DO - 10.1109/iclo54117.2022.9840142

M3 - Conference contribution

AN - SCOPUS:85136384551

SN - 9781665466646

SP - 1

EP - 1

BT - 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Conference Laser Optics, ICLO 2022

Y2 - 20 June 2022 through 24 June 2022

ER -

ID: 99999892