TY - GEN

T1 - Size-dependent properties of InAs quantum dots in Si

AU - Цырлин, Георгий Эрнстович

AU - Хребтов, Артем Игоревич

AU - Илькив, Игорь Владимирович

N1 - Conference code: 21

PY - 2024/7/1

Y1 - 2024/7/1

N2 - The self-assembled InAs quantum dots (QDs) in silicon were fabricated by solid source molecular beam epitaxy on Si(100) 4° substrates using Wolmer-Veber growth mode. The PL spectra exhibit 1.6 μ m emission from InAs quantum dots at 10 K. The size-depended luminescence behavior of QDs was observed. As the InAs coverage decreased from 2 to 0.5 monolayers (ML), the photoluminescence peak shifted from 1620 to 1580 nm and increased monotonously.

AB - The self-assembled InAs quantum dots (QDs) in silicon were fabricated by solid source molecular beam epitaxy on Si(100) 4° substrates using Wolmer-Veber growth mode. The PL spectra exhibit 1.6 μ m emission from InAs quantum dots at 10 K. The size-depended luminescence behavior of QDs was observed. As the InAs coverage decreased from 2 to 0.5 monolayers (ML), the photoluminescence peak shifted from 1620 to 1580 nm and increased monotonously.

KW - molecular beam epitaxy

KW - quantum dots

KW - semiconductors

KW - silicon

UR - https://www.mendeley.com/catalogue/3b665b0c-a8df-3e11-a524-958b9503df57/

U2 - 10.1109/iclo59702.2024.10624402

DO - 10.1109/iclo59702.2024.10624402

M3 - Conference contribution

SN - 9798350390674

T3 - IEEE Xplore Digital Library

SP - 415

BT - 2024 International Conference Laser Optics, ICLO 2024 - Proceedings

T2 - 21st International Conference Laser Optics

Y2 - 1 July 2024 through 5 July 2024

ER -