The self-assembled InAs quantum dots (QDs) in silicon were fabricated by solid source molecular beam epitaxy on Si(100) 4° substrates using Wolmer-Veber growth mode. The PL spectra exhibit 1.6 μ m emission from InAs quantum dots at 10 K. The size-depended luminescence behavior of QDs was observed. As the InAs coverage decreased from 2 to 0.5 monolayers (ML), the photoluminescence peak shifted from 1620 to 1580 nm and increased monotonously.