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  1. 1997

  2. Mathematical modelling and self-consistent calculation of the charge density of two-dimensional electron's system

    Ivankiv, I. M., Yafyasov, A. M., Bogevolnov, V. B., Pavlov, B. S. & Rudakova, T. V., Jun 1997, 22 p. (Department Maths Report Series 383)

    Research output: Book/Report/Anthology › Commissioned report › Research › peer-review

  3. 1996

  4. The dynamics of adsorption on the semiconductor surface.

    Яфясов, А. А. М., 1996.

    Research output: Contribution to conference › Abstract › peer-review

  5. 1994

  6. Parameters of band structure in surface layers of zero‐gap semiconductors (CdHg)Te

    Yafyasov, A., Bogevolnov, V. & Perepelkin, A., 1 Jan 1994, In: physica status solidi (b). 183, 2, p. 419-423 5 p.

    Research output: Contribution to journal › Article › peer-review

  7. 1987

  8. Физико-химические основы микроэлектроники конструирования и технологии РЭА и ЭВА.

    Яфясов, А. А. М., 1987, Физико-химические основы микроэлектроники конструирования и технологии РЭА и ЭВА. .

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

  9. 1986

  10. Manifestation of Structure and Occupation of Energy Bands in Surface Effects of Semiconductors

    Romanov, O. V. & Yafyasov, A. M., 1 Jan 1986, In: physica status solidi (a). 94, 1, p. 235-242 8 p.

    Research output: Contribution to journal › Article › peer-review

  11. 1984

  12. INVESTIGATION OF THE SELF-DEPOSITION OF Au AND Ag ON A GERMANIUM ELECTRODE.

    Romanov, O. V. & Yafyasov, A. M., 1 Aug 1984, In: SOVIET ELECTROCHEMISTRY. 20, 8, p. 998-1001 4 p.

    Research output: Contribution to journal › Article › peer-review

  13. CHARACTERISTICS OF THE Si-SiO2 PHASE BOUNDARY AND THE SURFACE MOBILITY OF HOLES IN AN INVERSION LAYER.

    Uritskii, V. Y., Romanov, O. V. & Yafyasov, A. M., 1 Jan 1984, In: Soviet physics. Semiconductors. 18, 3, p. 247-249 3 p.

    Research output: Contribution to journal › Article › peer-review

  14. POTENTIODYNAMIC MEASUREMENTS OF THE MOBILITY OF FREE CHARGE CARRIERS ON A SEMICONDUCTING ELECTRODE.

    Romanov, O. V. & Yafyasov, A. M., 1 Jan 1984, In: SOVIET ELECTROCHEMISTRY. 20, 1, p. 90-93 4 p.

    Research output: Contribution to journal › Article › peer-review

  15. 1983

  16. INFLUENCE OF BAND DEGENERACY AND NONPARABOLICITY ON THE MEASUREMENTS OF SURFACE EFFECTS IN SEMICONDUCTORS.

    Kapitonov, M. V., Yafyasov, A. M. & Romanov, O. V., 1 Jan 1983, In: Soviet physics. Semiconductors. 17, 5, p. 511-514 4 p.

    Research output: Contribution to journal › Article › peer-review

  17. 1979

  18. EFFECT OF THE POTENTIAL BARRIER SHAPE ON HOLE TRANSPORT IN A SURFACE INVERSION CHANNEL.

    Romanov, O. V. & Yafyasov, A. M., 1 Jan 1979, In: Soviet Microelectronics (English Translation of Mikroelektronika). 8, 3, p. 198-202 5 p.

    Research output: Contribution to journal › Article › peer-review

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