Research output: Contribution to journal › Article › peer-review
The results are given of experimental and theoretical investigation of surface transport processes in the valence band of silicon in MIS transistor inversion channels.
| Original language | English |
|---|---|
| Pages (from-to) | 198-202 |
| Number of pages | 5 |
| Journal | Soviet Microelectronics (English Translation of Mikroelektronika) |
| Volume | 8 |
| Issue number | 3 |
| State | Published - 1 Jan 1979 |
ID: 42242993