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A generalized theory of space charge layers is used to obtain calculation formulas for the principal electrophysical parameters of these layers in a semiconductor (charge Qsc, capacitance Csc, excess electron and hole densities ΔP and ΔN, and surface conductance σ□). Allowance is made for the degeneracy of the electron–hole gas, conduction band nonparabolicity (considered in the Kane approximation), and possible charge exchange between homogeneously distributed levels throughout the bulk of a sample and self‐consistent calculations are carried out on the basis of the effective‐mass approximation. High frequency (1 MHz) capacitance‐voltage characteristics of the “indium” subgroup of III–V compounds and CdxHg1−xTe, obtained by the complex field effect method in electrolyte, are reported.
Original language | English |
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Pages (from-to) | 235-242 |
Number of pages | 8 |
Journal | physica status solidi (a) |
Volume | 94 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jan 1986 |
ID: 42242438