Research output: Contribution to journal › Article › peer-review
An investigation was made of the influence of the state of the Si-SiO//2 phase boundary, represented by the built-in charge and surface state densities, on the surface transport of holes in an inversion layer. It was found that the state of the phase boundary could have a considerable influence on the mobility of free holes (particularly at low temperatures) and on the nature of their scattering in a surface inversion layer.
Original language | English |
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Pages (from-to) | 247-249 |
Number of pages | 3 |
Journal | Soviet physics. Semiconductors |
Volume | 18 |
Issue number | 3 |
State | Published - 1 Jan 1984 |
ID: 42242677