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  1. 2001

  2. Parameters of band structure in surface layers of the zero- gap semiconductor HgSe at room temperature

    Яфясов, А. А. М., 2001.

    Research output: Contribution to conference › Abstract › peer-review

  3. Self-assembling of low-dimensional quantum structures in the system “Cd0.33Hg0.67Te – electrolyte.

    Яфясов, А. А. М., 2001.

    Research output: Contribution to conference › Abstract › peer-review

  4. Space and time self-organization processes on semiconductor-electrolyte interface. javascript:void(0);

    Яфясов, А. А. М., 2001.

    Research output: Contribution to conference › Abstract › peer-review

  5. The surface layer properties of the TlBiSe2 and TlBiS semiconductors. Abstract-104. Symposium

    Яфясов, А. А. М., 2001.

    Research output: Contribution to conference › Abstract › peer-review

  6. 2000

  7. Forming of thin layers on a basis of narrow-gap CdHgTe in the semiconductor-electrolyte systems.

    Яфясов, А. А. М., 2000.

    Research output: Contribution to conference › Abstract › peer-review

  8. Landau levels in surface quantum well on gapless HgMnTe

    Яфясов, А. А. М., 2000.

    Research output: Contribution to conference › Abstract › peer-review

  9. ML-ALE synthesis of narrowgap compound semiconductors nano-layer.

    Яфясов, А. А. М., 2000.

    Research output: Contribution to conference › Abstract › peer-review

  10. Peculiarities of electron effective mass in accumulation and depletion layers of Kane semiconductors at the room temperature

    Яфясов, А. А. М., 2000.

    Research output: Contribution to conference › Abstract › peer-review

  11. The band structure parameters of surface layers of TlBiSe crystals.

    Яфясов, А. А. М., 2000.

    Research output: Contribution to conference › Abstract › peer-review

  12. The express method for control of results of liquid envi-roments dezinfection. javascript:void(0);

    Яфясов, А. А. М., 2000.

    Research output: Contribution to conference › Abstract › peer-review

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