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  1. 2013

  2. Электронные уровни и люминесценция дислокационных сеток, полученных гидрофильным сращиванием пластин кремния

    Бондаренко, А. С., Вывенко, О. Ф. & Исаков, И. А., 2013, In: ФИЗИКА И ТЕХНИКА ПОЛУПРОВОДНИКОВ. 47, 2, p. 223-227

    Research output: Contribution to journal › Article › peer-review

  3. 2012

  4. Secondary Electrons Energy Distribution In Helium Ion Microscope And Contrast Manipulation

    Petrov, Y. & Vyvenko, O., 1 Jan 2012, In: Microscopy and Microanalysis. 18, S2, p. 824-825 2 p.

    Research output: Contribution to journal › Article › peer-review

  5. Кафедра электроники твёрдого тела в Санкт-Петербургском униерситете: К 80-летию кафедры

    Адамчук, В. К., Артамонов, О. М., Барабан, А. П., Виноградов, А. С., Владимиров, Г. Г., Вывенко, О. Ф., Габис, И. Е., Комолов, А. С., Комолов, С. А., Коноров, П. П., Павлычев, А. А., Филатова, Е. О., Шикин, А. М., Шулаков, А. С. & Яфясов, А. М., 2012, Издательство Санкт-Петербургского университета. 277 p.

    Research output: Book/Report/Anthology › Anthology › Research › peer-review

  6. 2011

  7. DNA immobilization on n-type silicon surface and electrophysical properties of Au-DNA-(n-Si) structures1

    Sokolov, P. A., Bazlov, N. V., Puchkova, A. O., Vyvenko, O. F. & Kasyanenko, N. A., Sep 2011, In: Protection of Metals and Physical Chemistry of Surfaces. 47, 5, p. 566-571 6 p.

    Research output: Contribution to journal › Article › peer-review

  8. Correlation between cathodoluminescent and electrical properties of dislocation network in the space charge region of Schottky-diode

    Bondarenko, A., Vyvenko, O., Isakov, I. & Kononchuk, O., 2011, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 8, 4, p. 1273-1277

    Research output: Contribution to journal › Article

  9. Dislocation structure, electrical and luminescent properties of hydrophilically bonded silicon wafer interface

    Bondarenko, A., Vyvenko, O., Kolevatov, I., Isakov, I. & Kononchuk, O., 2011, In: Diffusion and Defect Data Pt.B: Solid State Phenomena. 178-179, p. 233-242

    Research output: Contribution to journal › Article

  10. DNA Immobilization on n-Type Silicon Surface and Electrophysical Properties of Au/DNA/(n-Si) Structures

    Sokolov, P. A., Bazlov, N. V., Puchkova, A. O., Vyvenko, O. F. & Kasyanenko, N. A., 2011, In: Protection of Metals and Physical Chemistry of Surfaces. 47, 5, p. 566–571

    Research output: Contribution to journal › Article › peer-review

  11. Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes

    Trushin, M., Vyvenko, O., Mchedlidze, T., Reiche, M. & Kittler, M., 2011, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 8, 4, p. 1371-1376

    Research output: Contribution to journal › Article

  12. Electrical levels of dislocation networks in p- and n-type Si

    Isakov, I., Bondarenko, A., Vyvenko, O., Vdovin, V., Ubyivovk, E. & Kononchuk, O., 2011, In: Journal of Physics: Conference Series. 281, 1, p. 012010_1-10

    Research output: Contribution to journal › Article › peer-review

  13. Giant Poole-Frenkel effect for the shallow dislocation-related hole traps in silicon

    Trushin, M., Vyvenko, O., Vdovin, V. & Kittler, M., 2011, In: Journal of Physics: Conference Series. 281, 1, p. 012009_1-10

    Research output: Contribution to journal › Article › peer-review

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