The electrically active centers in oxygen-implanted silicon › SPbU Researchers Portal

DOI

https://doi.org/10.1134/S1063782613020164
Other version

A.S. Loshachenko
O.F. Vyvenko
E.I. Shek
N.A. Sobolev

Original language	English
Pages (from-to)	285-288
Journal	Semiconductors
Volume	47
Issue number	2
DOIs	https://doi.org/10.1134/S1063782613020164
State	Published - 2013

ID: 7388796