Research output: Contribution to journal › Article › peer-review
The relaxation of the nonequilibrium capacitance of the Si-SiO//2 structure is investigated in an electrolyte in a very high electric field (up to 1. 4:10**7 V/cm). The results obtained confirm the relation between accelaration of the relaxation of nonequilibrium capacitance in intense electric fields and the increase in the rate of generation of minority carriers.
Original language | English |
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Pages (from-to) | 285-286 |
Number of pages | 2 |
Journal | Soviet Microelectronics (English Translation of Mikroelektronika) |
Volume | 8 |
Issue number | 4 |
State | Published - 1 Jan 1979 |
ID: 47620885