The relaxation of the nonequilibrium capacitance of the Si-SiO//2 structure is investigated in an electrolyte in a very high electric field (up to 1. 4:10**7 V/cm). The results obtained confirm the relation between accelaration of the relaxation of nonequilibrium capacitance in intense electric fields and the increase in the rate of generation of minority carriers.

Original languageEnglish
Pages (from-to)285-286
Number of pages2
JournalSoviet Microelectronics (English Translation of Mikroelektronika)
Volume8
Issue number4
StatePublished - 1 Jan 1979

    Scopus subject areas

  • Electrical and Electronic Engineering

ID: 47620885